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Nexxim Simulator >
Nexxim Component Models >
MOSFET Levels 49 through 54 >
BSIM4 MOSFET Model, Level 54

BSIM4 MOSFET Model, Level 54

The syntax for a Berkeley BSIM4.3.0 MOSFET model is:

.MODEL modelname NMOS LEVEL=54 VERSION=val [parameter=val] ...

.MODEL modelname PMOS LEVEL=54 VERSION=val [parameter=val] ...

modelname is the name used by MOSFET instances to refer to this .MODEL statement. The LEVEL=54 entry selects the BSIM4 model.

**Level 54 MOSFET Model Selector Parameters**
Model Parameter	Description	Unit	Default
LEVEL	54 is required to select the Berkeley BSIM4 MOSFET model	None	1 (default if LEVEL parameter is omitted)
VERSION	BSIM4 version selector	None	4.4.0
ACNQSMOD	AC small-signal nonquasistatic model selector (1 = ON)	None	0 (off)
CAPMOD	Capacitance model selector (0, 1, 2, 3)	None	2
CVCHARGEMOD	Capacitance charge model selector	None	0
DIOMOD	Source/drain junction diode I-V model selector	None	1
FNOIMOD	Flicker noise model selector	None	1
GEOMOD	Geometry-dependent parasitics model selector	None	0 (isolated)
IGBMOD	Gate-to-substrate tunneling current model selector	None	0 (off)
IGCMOD	Gate-to-channel tunneling current model selector	None	0 (off)
MOBMOD	Mobility model selector	None	0
MTRLMOD	Selector for non-silicon substrate or metal gate	None	0
PARAMCHK	Switch for parameter checking	None	1 (check)
PERMOD	Switch for including gate-edge perimeter in PS and PD (when present)	None	1 (include)
RBODYMOD	Substrate resistance network model selector	None	0 (network off)
RDSMOD	Bias-dependent source/drain resistance model selector	None	0
RGATEMOD	Gate resistance model selector	None	0
STIMOD	STI model selector	None	0
TEMPMOD	Temperature mode selector	None	0
TNOIMOD	Thermal noise model selector	None	0
TRNQSMOD	Transient nonquasistatic model selector (1 = ON)	None	0 (OFF)
WPEMOD	Flag for WPE model 1 to activate	None	0

**Level 54 MOSFET Model Process Parameters**
Model Parameter	Description	Unit	Default
ADOS	Charge centroid parameter		1.0
BDOS	Charge centroid parameter		1.0
BG0SUB	Bandgap of substrate at 0K	cm^-3	1.16
DTOX	TOXE - TOXP	Meter	0.0
EASUB	Electron affinity of substrate		4.05
EOT	Equivalent gate oxide thickness	Meter	15.0e-10
EPSRGATE	Dielectric constant of gate relative to vacuum		11.7
EPSROX	Gate dielectric constant relative to vacuum	None	3.9 (SiO₂)
EPSRSUB	Dielectric constant of substrate relative to vacuum		11.7
GAMMA1	Body-effect coefficient near the surface	Volt^½	Calculated
GAMMA2	Body-effect coefficient in the bulk	Volt^½	Calculated
JTWEFF	TAT current width dependence		0
LEFFEOT	Effective length for extraction of EOT		1.0
NDEP	Channel doping concentration at depletion edge for zero body bias	cm^-3	1.7e+17
NGATE	Polysilicon gate doping concentration	cm^-3	0.0
NI0SUB	Intrinsic carrier concentration of substrate at 300.15K	cm^-3	1.45e10
NSD	Source/drain doping concentration	cm^-3	1.0e+20
NSUB	Substrate doping concentration	cm^-3	6.0e+16
PHIG	Work function of gate		Calculated
RSH	Source/drain sheet resistance	Ohm/square	0.0
RSHG	Gate electrode sheet resistance	Ohm/square	0.1
TBGASUB	First parameter of band-gap change due to temperature		7.02e-4
TBGBSUB	Second parameter of band-gap change due to temperature		1108.0
TEMPEOT	Temperature for extraction of EOT	°K	300.15
TOXE	Electrical gate equivalent oxide thickness	Meter	TOXREF
TOXM	Gate thickness at which parameters are extracted	Meter	TOXE
TOXP	Physical gate equivalent oxide thickness	Meter	TOXE
UCS	Colombic scattering exponent		Calculated
UCSTE	Temperatuer coefficient of Colombic mobility		-4.775e-3
VBX	V_bs at which the depletion region width equals XT	Volt	Calculated
VDDEOT	Voltage for extraction of EOT	Volt	Calculated
WEFFEOT	Effective width for extraction of EOT		10.0
XJ	Source/drain junction depth	Meter	1.5e-7
XT	Doping depth	Meter	1.55e-7

**Level 54 MOSFET Basic Model Parameters**
Model Parameter	Description	Unit	Default
A0	Coefficient of channel length dependence of bulk charge effect	None	1.0
A1	1st nonsaturation effect parameter	Volt^-1	0.0
A2	2nd nonsaturation effect parameter	None	1.0
AGS	Coefficient of V_GS dependence of bulk charge effect	Volt^-1	0.0
B0	Bulk charge effect coefficient for channel width	Meter	0.0
B1	Bulk charge effect width offset	Meter	0.0
CDSC	Drain-source and channel coupling capacitance	Farad/Meter²	2.4e-4
CDSCB	Body-bias sensitivity coefficient of C_DSC	Farad/Volt-Meter²	0.0
CDSCD	Drain bias sensitivity of C_DSC	Farad/Volt-Meter²	0.0
CIT	Interface trap capacitance	Farad/Meter²	0.0
DELTA	Parameter for V_DSeff	Volt	0.01
DROUT	Channel length dependence of the DIBL effect on R_OUT	None	0.56
DSUB	DIBL coefficient exponent in subthreshold region	None	DROUT
DVT0	1st coefficient of short-channel effect on V_th	None	2.2
DVT0W	1st coefficient of narrow width effect on V_th for small channel length	None	0.0
DVT1	2nd coefficient of short-channel effect on V_th	None	0.53
DVT1W	2nd coefficient of narrow width effect on V_th for small channel length	Meter^-1	5.3e+6
DVT2	Body-bias coefficient of short-channel effect on V_th	Volt^-1	-0.032
DVT2W	Body-bias coefficient of narrow width effect on V_th for small channel length	Volt^-1	-0.032
DVTP0	1st coefficient of drain-induced V_th shift for long channel pocket devices	Meter	0.0
DVTP1	2nd coefficient of drain-induced V_th shift for long channel pocket devices	Volt^-1	0.0
DWB	Coefficient of body bias dependence of Weff	Meter/Volt^½	0.0
DWG	Coefficient of gate bias dependence of Weff	Meter/Volt	0.0
ETA0	Subthreshold region DIBL coefficient	None	0.08
ETAB	Body-bias coefficient for the subthreshold DIBL effect	Volt^-1	-0.07
EU	Exponent for mobility degradation of MOBMOD=2	None	NMOS: 1.67 PMOS: 1.0
FPROUT	Effect of pocket implant on Rout degradation	Volt/Meter^½	0.0
K1	1st-order body bias coefficient	Volt^½	Calculated
K2	2nd-order body bias coefficient	None	Calculated
K3	Narrow width coefficient	None	80.0
K3B	Body effect coefficient of K3	Volt^-1	0.0
KETA	Body-bias coefficient of bulk charge effect	Volt^-1	-0.047
LAMBDA	Velocity overshoot coefficient	None	0.0
LC	Velocity back-scattering coefficient	Meter	5.0e-9
LINT	Channel length offset parameter at V_BS = 0.	Meter	0.0
LINTNOI	Length reduction parameter offset	Meter	0.0
LMLT	Length scaling parameter	None	1.0
LP	Mobility channel length exponential coefficient		1e-8
LPE0	Lateral non-uniform doping parameter	Meter	1.74e-7
LPEB	Lateral non-uniform doping effect on K1	Meter	0.0
MINV	V_GSTefffitting parameter for moderate inversion condition	None	0.0
MINVCV	Fitting parameter for moderate inversion in V_GSTeffcv	None	0
NFACTOR	Subthreshold swing factor	None	1.0
PCLM	Channel length modulation parameter	None	1.3
PDIBL1 (PDIBLC1)	Parameter for DIBL effect on R_OUT	None	0.39
PDIBL2 (PDIBLC2)	Parameter for DIBL effect on R_OUT	None	0.0086
PDIBLB (PDIBLCB)	Body bias coefficient of DIBL effect on R_OUT	Volt^-1	0.0
PDITS	Impact of drain-induced VTH shift on R_OUT	Volt^-1	0.0
PDITSL	Channel length dependence of drain-induced V_TH shift for R_OUT	Meter^-1	0.0
PDITSD	V_DS dependence of drain-induced V_TH shift for R_OUT	Volt^-1	0.0
PHIN	Non-uniform vertical doping effect on surface potential	Volt	0.0
PSCBE1	1st substrate current-induced body effect parameter	Volt/Meter	4.24e+8
PSCBE2	2nd substrate current-induced body effect parameter	Meter/Volt	1.0e-5
PVAG	Gate-bias dependence of Early voltage	None	0.0
SCALM	Model scaling parameter	None	1.0
SCREF	Reference distance to calculate SCA, SCB, and SCD	Meter	1e-6
U0	Low field mobility	Meter²/Volt-sec	NMOS: 670 PMOS: 250
UA	Coefficient of 1st-order mobility degradation due to vertical field	Meter/Volt	MOBMOD=0,1: 1.0e-9 MOBMOD=2: 1.0e-15
UB	Coefficient of 2nd-order mobility degradation due to vertical field	Meter²/Volt²	1.0e-19
UC	Coefficient of mobility degradation due to body-bias effect	MOBMOD=1: Volt^-1 Else: Meter/Volt²	MOBMOD=0, 2: -0.0465e-9 MOBMOD=1: -0.0465
UD	Mobility scattering coefficient		0.0
UP	Mobility channel length coefficient		0.0
VBM	Maximum applied body bias in V_TH0 calculation	Volt	-3.0
VFB	Flat-band voltage	Volt	Calculated
VFBSDOFF	Flatband voltage offset parameter	Volt	0.0
VOFF	Offset voltage in subthreshold region for large W and L	Volt	-0.08
VOFFL	Channel-length dependence of VOFF	Volt-Meter	0.0
VSAT	Saturation velocity of carrier	Meter/sec	8.0e+4
VTH0 (VTHO)	Long-channel threshold voltage at V_BS=0	Volt	NMOS: 0.7 PMOS: -0.7
VTL	Thermal velocity	Meter/second	2.05e5
WEB	Coefficient for SCB		0.0
WEC	Coefficient for SCC		0.0
W0	Narrow width effect parameter	Meter	2.5e-6
WINT	Channel width offset parameter	Meter	0.0
WMLT	Width scaling parameter	None	1.0
XN	Velocity back-scattering coefficient	None	3.0

**Level 54 MOSFET Impact Ionization Model Parameters**
Model Parameter	Description	Unit	Default
ALPHA0	1st parameter of impact ionization current	Amp-Meter/Volt	0.0
ALPHA1	Isub parameter for length scaling	Amp/Volt	0.0
BETA0	2nd parameter of impact ionization current	Volt	30.0

**Level 54 MOSFET Asymmetric and Bias-Dependent Rds Model Parameters**
Model Parameter	Description	Unit	Default
PRWB	Body bias dependence of lightly-doped drain (LDD) resistance	1/Volt^½	0.0
PRWG	Gate bias dependence of LDD resistance	Volt^-1	1.0
RDSW	Zero-bias LDD resistance per unit width for RDSMOD=0	Ohm-mMeter^WR	200.0
RDSWMIN	LDD resistance per unit width at high Vgs and zero Vbs for RDSMOD=0	Ohm-mMeter^WR	0.0
RDW	Zero-bias LDD resistance per unit width for RDSMOD=1	Ohm-mMeter^WR	100.0
RDWMIN	LDD resistance per unit width at high Vgs and zero Vbs for RDSMOD=1	Ohm-mMeter^WR	0.0
RSW	Zero-bias lightly-doped source (LDS) resistance (R_s(V)) per unit width for RDSMOD=1	Ohm-mMeter^WR	100.0
RSWMIN	LDS resistance per unit width at high Vgs and zero Vbs for RDSMOD=1	Ohm-mMeter^WR	0.0
WR	Channel-width dependence parameter of LDD resistance	None	1.0

**Level 54 MOSFET GIDL and GISL Model Parameters**
Model Parameter	Description	Unit	Default
AGIDL	Pre-exponential coefficient for GIDL	Mho	0.0
BGIDL	Exponential coefficient for GIDL	Volt/Meter	2.3e+9
CGIDL	Parameter for body-bias effect on GIDL	Volt³	0.5
EGIDL	Fitting parameter for band bending for GIDL	Volt	0.8
AGISL	Pre-exponential coefficient for GISL	Mho	0.0
BGISL	Exponential coefficient for GISL	Volt/Meter	2.3e+9
CGISL	Parameter for body-bias effect on GISL	Volt³	0.5
EGISL	Fitting parameter for band bending for GISL	Volt	0.8

**Level 54 MOSFET Gate Dielectric Tunneling Current Model Parameters**
Model Parameter	Description	Unit	Default
AIGBACC	Parameter for Igb in accumulation	(F-s²/g)^½/Meter	0.43
AIGBINV	Parameter for Igb in inversion	(F-s²/g)^½/Meter	0.35
AIGC	Parameter for Igcs and Igcd	(F-s²/g)^½/Meter	NMOS: 0.054 PMOS: 0.31
AIGD	Parameter for Igd		Calculated
AIGS	Parameter for Igs		Calculated
AIGSD	Parameter for Igs and Igd	(F-s²/g)^½/Meter	NMOS: 0.43 PMOS: 0.31
BIGBACC	Parameter for Igb in accumulation region	(F-s²/g)^½/Meter-Volt	0.054
BIGBINV	Parameter for Igb in inversion	(F-s²/g)^½/Meter-Volt	0.03
BIGC	Parameter for Igcs and Igcd	(F-s²/g)^½/Meter-Volt	NMOS: 0.054 PMOS: 0.024
BIGD	Parameter for Igd		Calculated
BIGS	Parameter for Igs		Calculated
BIGSD	Parameter for Igs and Igd	(F-s²/g)^½/Meter-Volt	NMOS: 0.054 PMOS: 0.024
CIGBACC	Parameter for Igb in accumulation	Volt^-1	0.075
CIGBINV	Parameter for Igb in inversion	Volt^-1	0.006
CIGC	Parameter for Igcs and Igcd	Volt^-1	NMOS: 0.075 PMOS: 0.03
CIGD	Parameter for Igd		Calculated
CIGS	Parameter for Igs		Calculated
CIGSD	Parameter for Igs and Igd	Volt^-1	NMOS: 0.075 PMOS: 0.03
DLCIG	Source/drain overlap length for Igs and Igd	Meter	LINT
DLCIGD	Delta L for Igd model	Meter	LINT
EIGBINV	Parameter for Igb in inversion	Volt	1.1
NIGBACC	Parameter for Igb in accumulation	None	1.0
NIGBINV	Parameter for Igb in inversion	None	3.0
NIGC	Parameter for Igcs, Igcd, Igs, and Igd	None	1.0
NTOX	Exponent for the gate oxide ratio	None	1.0
PIGCD	Vds dependence of Igcs and Igcd	None	1.0
POXEDGE	Factor for gate oxide thickness in source/drain overlap regions	None	1.0
TOXREF	Nominal gate oxide thickness for gate dielectric tunneling current model only	Meter	3.0e-9

**Level 54 MOSFET Charge and Capacitance Model Parameters**
Model Parameter	Description	Unit	Default
ACDE	Exponential coefficient for charge thickness in CAPMOD=2 for accumulation and depletion regions	Meter/Volt	1.0
CF	Fringing field capacitance	Farad/Meter	Calculated
CGBO	Gate-bulk overlap capacitance per unit channel length	Farad/Meter	Calculated
CGDO	Non-LDD region drain-gate overlap capacitance per unit channel width	Farad/Meter	Calculated
CGDL	Overlap capacitance between gate and lightly-doped drain region	Farad/Meter	0.0
CGSL	Overlap capacitance between gate and lightly-doped source region	Farad/Meter	0.0
CGSO	Non-LDD region source-gate overlap capacitance per unit channel width	Farad/Meter	Calculated
CKAPPAD	Coefficient of bias-dependent overlap capacitance for the drain side	Volt	CKAPPAS
CKAPPAS	Coefficient of bias-dependent overlap capacitance for the source side	Volt	0.6
CLC	Constant term for short-channel model	Meter	0.1e-6
CLE	Exponential term for short-channel model	None	0.6
DLC	Channel length offset parameter for C-V model	Meter	LINT
DWC	Channel width offset parameter for C-V model	Meter	WINT
MINVCV	Fitting parameter for moderate inversion in Vgsteff		0.0
MOIN	Coefficient for the gate bias-dependent surface potential	None	15.0
NOFF	C-V parameter in V_GSTeff,CV for weak-to-strong inversion	None	1.0
VFBCV	Flat-band voltage parameter [CAPMOD=0]	Volt	-1.0
VOFFCV	C-V parameter in V_GSTeff,CV for weak-to-strong inversion	Volt	0.0
VOFFCVL	Length dependence parameter for VTHG offset in C-V		0.0
XPART	Charge partition parameter 0 = 40/60 0.5 = 50/50 ³ 1 = 0/100 Any other value < 1 = 40/60	None	0 (40/60)

**Level 54 MOSFET High-Speed/RF Model Parameters**
Model Parameter	Description	Unit	Default
GBMIN	Conductance in parallel with each of the five substrate resistances to aid convergence	Mho	1.0e-12
RBDB	Resistance connected between dbNode and bNode	Ohm	50.0
RBDBX0	Scaling prefactor for RBDBX		Calculated
RBDBY0	Scaling prefactor for RBDBY		Calculated
RBPB	Resistance connected between bNodePrime and bNode	Ohm	50.0
RBPBX0	Scaling prefactor for RBPBX		100.0
RBPBXL	Length scaling factor for RBPBX		0.0
RBPBXW	Width scaling factor for RBPBX		0.0
RBPBXNF	Number of fingers scaling factor for RBPBX		0.0
RBPBY0	Scaling prefactor for RBPBY		100.0
RBPBYL	Length scaling factor for RBPBY		0.0
RBPBYW	Width scaling factor for RBPBY		0.0
RBPBYNF	Number of fingers scaling factor for RBPBY		0.0
RBPD	Resistance connected between bNodePrime and dbNode	Ohm	50.0
RBPD0	Scaling prefactor for RBPD		Calculated
RBPDL	Length scaling factor for RBPD		0.0
RBPDW	Width scaling factor for RBPD		0.0
RBPDNF	Number of fingers scaling factor for RBPD		0.0
RBPS	Resistance connected between bNodePrime and sbNode	Ohm	50.0
RBPS0	Scaling prefactor for RBPS		Calculated
RBPSL	Length scaling factor for RBPS		0.0
RBPSW	Width scaling factor for RBPS		0.0
RBPSNF	Number of fingers scaling factor for RBPS		0.0
RBSB	Resistance connected between sbNode and bNode	Ohm	50.0
RBSBX0	Scaling prefactor for RBSBX		Calculated
RBSBY0	Scaling prefactor for RBSBY		Calculated
RBSDBXL	Length scaling factor for RBSBX and RBDBX		0.0
RBSDBXW	Width scaling factor for RBSBX and RBDBX		0.0
RBSDBXNF	Number of fingers scaling factor for RBSBX and RBDBX		0.0
RBSDBYL	Length scaling factor for RBSBY and RBDBY		0.0
RBSDBYW	Width scaling factor for RBSBY and RBDBY		0.0
RBSDBYNF	Number of fingers scaling factor for RBSBY and RBDBY		0.0
XRCRG1	Parameter for distributed channel-resistance effect for both intrinsic-input resistance and charge-deficit NQS models	None	12.0
XRCRG2	Parameter to account for the excess channel diffusion resistance for both intrinsic-input resistance and charge-deficit NQS models	None	1.0

**Level 54 MOSFET Noise Model Parameters**
Model Parameter	Description	Unit	Default
AF	Flicker noise exponent	None	1.0
EF	Flicker noise frequency exponent	None	1.0
EM	Saturation field	Volt/Meter	4.1e+7
KF	Flicker noise coefficient	A^2-EFs^1-EFF	0.0
NLEV	HSPICE noise level	None	99
NOIA	Flicker noise parameter A	s^1-EF/eV-m³	NMOS: 1e20 PMOS: 9.9e18
NOIB	Flicker noise parameter B	s^1-EF/eV-m	NMOS: 5e4 PMOS: 2.4e3
NOIC	Flicker noise parameter C	s^1-EF/eV	8.75e+9
NTNOI	Noise factor for short-channel devices for TNOIMOD=0 only	None	1.0
RNOIA	Thermal noise coefficient	None	0.577
RNOIB	Thermal noise coefficient	None	0.5164
TNOIA	Coefficient of channel-length dependence of total channel thermal noise	None	1.5
TNOIB	Channel-length dependence parameter for channel thermal noise partitioning	None	3.5

**Level 54 MOSFET Layout-Dependent Parasitics Model Parameters**
Model Parameter	Description	Unit	Default
DMCG	Distance from source/drain contact center to the gate edge	Meter	0.0
DMCGT	DMCG of test structures	Meter	0.0
DMCI	Distance from source/drain contact center to the isolation edge in the channel-length direction	Meter	DMCG
DMDG	Same as DMCG but for merged device only	Meter	0.0
DWJ	Offset of the source/drain junction width	Meter	DWC
NGCON	Number of gate contacts	None	1
XGL	Offset of the gate length due to variations in patterning	Meter	0.0
XGW	Distance from the gate contact to the channel edge	Meter	0.0
XL	Channel length offset due to mask/etch effect	Meter	0.0
XW	Channel width offset due to mask/etch effect	Meter	0.0

**Level 54 MOSFET Asymmetric Source/Drain Junction Diode Model Parameters**
Model Parameter	Description	Unit	Default
BVD	Breakdown voltage (drain side)	Volt	BVS
BVS	Breakdown voltage (source side)	Volt	10.0
CJD	Bottom junction capacitance per unit area at zero bias (drain side)	Farad/Meter²	CJS
CJS	Bottom junction capacitance per unit area at zero bias (source side)	Farad/Meter²	5.0e-4
CJSWD	Isolation-edge sidewall bulk junction capacitance per unit area (drain side)	Farad/Meter	CJSWS
CJSWGD	Gate-edge sidewall junction capacitance per unit area (drain side)	Farad/Meter	CJSWS
CJSWGS	Gate-edge sidewall junction capacitance per unit length (source side)	Farad/Meter	CJSWS
CJSWS	Isolation-edge sidewall junction capacitance per unit length (source side)	Farad/Meter	5.0e-10
GMIN	Minimum conductance for diodes	Mho	0.0
IJTHDFWD	Limiting current in forward bias region (drain side)	Amp	IJTHSFWD
IJTHDREV	Limiting current in reverse bias region (drain side)	Amp	IJTHSREV
IJTHSFWD	Limiting current in forward bias region (source side)	Amp	0.1
IJTHSREV	Limiting current in reverse bias region (source side)	Amp	0.1
JSD	Bottom junction reverse saturation current density (drain side)	Amp/Meter²	1e-4
JSS	Bottom junction reverse saturation current density (source side)	Amp/Meter²	1.0e-4
JSWD	Isolation-edge sidewall reverse saturation current density (drain side)	Amp/Meter	0.0
JSWGD	Gate-edge sidewall reverse saturation current density (drain side)	Amp/Meter	0.0
JSWGS	Gate-edge sidewall reverse saturation current density (source side)	Amp/Meter	0.0
JSWS	Isolation-edge sidewall reverse saturation current density (source side)	Amp/Meter	0.0
JTSS	Bottom trap-assisted saturation current density	Amp/Meter	0.0
JTSD	Bottom trap-assisted saturation current density	Amp/Meter	Calculated
JTSSWS	STI sidewall trap-assisted saturation current density	Amp/Meter	0.0
JTSSWD	STI sidewall trap-assisted saturation current density	Amp/Meter	Calculated
JTSSWGD	Gate-edge sidewall trap-assisted saturation current density	Amp/Meter	Calculated
JTSSWGS	Gate-edge sidewall trap-assisted saturation current density	Amp/Meter	0.0
MJD	Bottom junction capacitance grading coefficient (drain side)	None	0.5
MJS	Bottom junction capacitance grading coefficient (source side)	None	0.5
MJSWD	Isolation-edge sidewall junction capacitance grading coefficient (drain side)	None	0.33
MJSWGD	Gate-edge sidewall bulk junction capacitance grading coefficient (drain side)	None	MJSWS
MJSWGS	Gate-edge sidewall bulk junction capacitance grading coefficient (source side)	None	MJSWS
MJSWS	Isolation-edge sidewall junction capacitance grading coefficient (source side)	None	0.33
NJTS	Non-ideality factor for JTSS, JTSD		20.0
NJTSSW	Non-ideality factor for JTSSWS, JTSSWD		20.0
NJTSSWG	Non-ideality factor for JTSSWGS, JTSSWGD		20.0
NJTSD	Non-ideality factor for JTSD		Calculated
NJTSSWD	Non-ideality factor for JTSSWD		Calculated
NJTSSWGD	Non-ideality factor for JTSSWGD		Calculated
PBD	Bottom junction built-in potential (drain side)	Volt	1.0
PBS	Bottom junction built-in potential (source side)	Volt	1.0
PBSWD	Isolation-edge sidewall junction built-in potential (drain side)	Volt	1.0
PBSWGD	Gate-edge sidewall bulk junction built-in potential (drain side)	Volt	PBSWS
PBSWGS	Gate-edge sidewall bulk junction built-in potential (source side)	Volt	PBSWS
PBSWS	Isolation-edge sidewall junction built-in potential (source side)	Volt	1.0
TNJTS	Temperature coefficient for NJTS		0.0
TNJTSSW	Temperature coefficient for NJTSSW		0.0
TNJTSSWG	Temperature coefficient for NJTSSWG		0.0
XJBVD	Fitting parameter for diode breakdown (drain side)	None	XJBVS
XJBVS	Fitting parameter for diode breakdown (source side)	None	1.0
XTSS	Power dependence of JTSS on temperature		0.02
XTSD	Power dependence of JTSD on temperature		0.02
XTSSWS	Power dependence of JTSSWS on temperature		0.02
XTSSWD	Power dependence of JTSSWD on temperature		0.02
XTSSWGS	Power dependence of JTSSWGS on temperature		0.02
XTSSWGD	Power dependence of JTSSWGD on temperature		0.02
VTSS	Bottom trap-assisted voltage dependent parameter		10.0
VTSD	Bottom trap-assisted voltage dependent parameter		Calculated
VTSSWS	STI sidewall trap-assisted voltage dependent parameter		10.0
VTSSWD	STI sidewall trap-assisted voltage dependent parameter		Calculated
VTSSWGS	Gate-edge sidewall trap-assisted voltage dependent parameter		10.0
VTSSWGD	Gate-edge sidewall trap-assisted voltage dependent parameter		Calculated

**Level 54 MOSFET Temperature Model Parameters**
Model Parameter	Description	Unit	Default
AT	Temperature coefficient for saturation velocity	Meter/sec	3.3e+4
KT1	Temperature coefficient for threshold voltage	Volt	-0.11
KT1L	Channel length dependence of the temperature coefficient for threshold voltage	Volt-Meter	0.0
KT2	Body bias coefficient of V_TH temperature effect	None	0.022
NJD	Emission coefficient for drain junction	None	NJS
NJS	Emission coefficient for source junction	None	1.0
PRT	Temperature coefficient for R_DSW	Ohm-Meter	0.0
TCJ	Temperature coefficient of CJ	°K^-1	0.0
TCJSW	Temperature coefficient of CJSW	°K^-1	0.0
TCJSWG	Temperature coefficient of CJSWG	°K^-1	0.0
TNJTSD	Temperature coefficient for NJTSD
TNJTSSWD	Temperature coefficient for NJTSSWD
TNJTSSWGD	Temperature coefficient for NJTSSWGD
TNOM	Temperature at which parameters are extracted	°C	25
TPB	Temperature coefficient of PB	Volt/°K	0.0
TPBSW	Temperature coefficient of PBSW	Volt/°K	0.0
TPBSWG	Temperature coefficient of PBSWG	Volt/°K	0.0
TVFBSDOFF	Temperature coefficient of Vfbsdoff		0.0
TVOFF	Temperature coefficient of Voff		0.0
UA1	Temperature coefficient for UA	Meter/Volt	1.0e-9
UB1	Temperature coefficient for UB	Meter²/Volt²	-1.0e-18
UC1	Temperature coefficient for UC	MOBMOD=0, 2: Meter/Volt² MOBMOD=1: Volt^-1	MOBMOD=0, 2:--0.056e-9 MOBMOD=1: 0.056
UD1	Temperature coefficient for UD		0.0
UTE	Mobility temperature exponent	None	-1.5
XTID	Drain junction current temperature exponent	None	XTIS
XTIS	Source junction current temperature exponent	None	3.0

**Level 54 MOSFET dW and dL Model Parameters**
Model Parameter	Description	Unit	Default
LL	Coefficient of length dependence for length offset	Meter^LLN	0.0
LLC	Coefficient of length dependence for C-V channel length offset	Meter^LLN	LL
LLN	Power of length dependence for length offset	None	1.0
LW	Coefficient of width dependence for length offset	Meter^LWN	0.0
LWC	Coefficient of width dependence for C-V channel length offset	Meter^LWN	LW
LWL	Coefficient of length and width cross term dependence for length offset	Meter^LWN+LLN	0.0
LWLC	Coefficient of length and width cross term dependence for C-V channel length offset	Meter^LWN+LLN	LWL
LWN	Power of width dependence for length offset	None	1.0
WL	Coefficient of length dependence for width offset	Meter^WLN	0.0
WLC	Coefficient of length dependence for C-V channel width offset	Meter^WLN	WL
WLN	Exponent of length dependence of width offset	None	1.0
WW	Coefficient of width dependence for width offset	Meter^WWN	0.0
WWC	Coefficient of width dependence for C-V channel width offset	Meter^WWN	WW
WWL	Coefficient of length and width cross term dependence for width offset	Meter^WWN+WLN	0.0
WWLC	Coefficient of length and width cross term dependence for C-V channel width offset	Meter^WWN+WLN	WWL
WWN	Power of width dependence for width offset	None	1.0

**Level 49 or 53 MOSFET W and L Binning Adjustment Model Parameters**
Model Parameter	Description	Unit	Default
BINUNIT	Binning unit selector 1 = microns 0 = Meters	None	1
LMAX	Maximum channel length	Meter	1.0
LMIN	Minimum channel length	Meter	0.0
WMAX	Maximum channel width	Meter	1.0
WMIN	Minimum channel width	Meter	0.0

Notes on BSIM4 Binning Adjustment

Binning is a way to extend a single device architecture by providing systematic variations on the device parameters. The philosophy is that when you vary the channel geometry, other parameters also change, in ways that can be completely characterized by the device manufacturer. The manufacturer or foundry provides a “design kit” that contains a set of .MODEL statements specifying the parameter settings for the different geometries. The design kit with the .MODEL statements can be included in the Nexxim design as a subcircuit.

1. A binning model is identified by giving the model name in the .MODEL statement the form modelname.n, where the entry n after the decimal point can be an integer or any other unique identifier. The MOSFET instance definition refers to the modelname without any extension. The netlist can contain any number of different binning models with the same base modelname. For example, three binning models could be named NMOSBSIM4.1 NMOSBSIM4.2, and NMOSBSIM4.3. The instance statement would reference simply NMOSBSIM4.

Each of the available binning models corresponds to a range of channel lengths and widths specified with the LMIN, LMAX, WMIN, and WMAX model parameters. The ranges must not overlap.

Each binning model typically specifies values for the model parameters that are related to the channel geometry variations.

2. The MOSFET instance statement must contain values for instance parameters L and W. The L and W parameters can be specified with variables so that a sweep of binning models can be performed.

3. The simulator finds the binning model to which the following conditions BOTH apply:

• The LMIN and LMAX model parameter range includes the value of instance parameter L (scaled by the instance parameter SCALE).

• The WMIN and WMAX model parameter range includes the value of instance parameter W (scaled by the instance parameter SCALE).

If none of the available binning models matches the L and W instance parameters, simulation does not proceed.

4. Within a BSIM4 model (binned or not), the binned model parameters are adjusted by the effective channel length and width. The formula for the adjustment uses the following symbols:

N = value of the model parameter, for example A0.

LN = value of the length dependence parameter, for example LA0.

WN = value of the width dependence parameter, for example WA0.

PN = value of the cross dependence parameter, for example PA0.

Leff = effective channel length (calculated from L using scale factors and other adjustments).

Weff = effective channel width (calculated from W using scale factors and other adjustments).

Adjustment formula:

Value = N + LN*(1/Leff) + WN*(1/Weff) + PN*(1/(Leff*Weff))

5. When model parameter BINUNIT equals 1, the effective parameters (Leff, Weff, LREFeff, and WREFeff) are scaled to units of microns. By default (BINUNIT not equal to 1), units are meters.

**Level 54 MOSFET Stress Effect Model Parameters**
Model Parameter	Description	Unit	Default
K2WE	K2 shift factor for well proximity effect		0.0
KU0	Mobility degradation/enhancement coefficient for stress effect	Meter	0.0
KU0WE	Mobility degradation factor for WPE		0.0
KVSAT	Saturation velocity degradation/enhancement parameter for stress effect (-1.0 £ KVSAT £ 1.0)	Meter	0.0
KVTH0	Threshold shift parameter for stress effect	Volt-Meter	0.0
KVTH0WE	Threshold shift factor for well proximity effect		0.0
LKU0	Length coefficient of KU0	None	0.0
LKVTH0	Length dependence of KVTH0	None	0.0
LLODKU0	Length parameter for u0 stress effect	None	0.0
LLODVTH	Length parameter for V_TH stress effect (must be > 0.0)	None	0.0
LODETA0	ETA₀ shift modification factor for stress effect	None	1.0
LODK2	K2 shift modification factor for stress effect	None	1.0
PKVTH0	Cross-term dependence of KVTH0	None	0.0
SAREF	Reference distance between OD edge to poly of one side (must be > 0.0)	Meter	1.0e-6
SBREF	Reference distance between OD edge to poly of the other side (must be > 0.0)	Meter	1.0e-6
STETA0	ETA₀ shift factor related to V_TH0 change	Meter	0.0
STK2	K2 shift factor related to V_TH0 change	Meter	0.0
TKU0	Temperature coefficient of KU0	None	0.0
WKU0	Width coefficient of KU0	None	0.0
WKVTH0	Width dependence of KVTH0	None	0.0
WLOD	Width parameter for stress effect	Meter	0.0
WLODKU0	Width parameter for u0 stress effect	None	0.0
WLODVTH	Width parameter for V_TH stress effect (must be ³ 0.0)	None	0.0

The unit for each length-dependent parameter is the unit of the base parameter divided by Meter.

**Level 54 Length Dependence Parameters**
Model Parameter	Description	Default
La0	Length dependence of a0	0.0
La1	Length dependence of a1	0.0
La2	Length dependence of a2	0.0
Lacde	Length dependence of acde	0.0
Lagidl	Length dependence of agidl	0.0
Lagisl	Length dependence of agisl	0.0
Lags	Length dependence of ags	0.0
Laigbacc	Length dependence of aigbacc	0.0
Laigbinv	Length dependence of aigbinv	0.0
Laigc	Length dependence of aigc	0.0
Laigs	Length dependence of aigs	0.0
Laigsd	Length dependence of aigsd	0.0
Laigd	Length dependence of aigd	0.0
Lalpha0	Length dependence of alpha0	0.0
Lalpha1	Length dependence of alpha1	0.0
Lat	Length dependence of at	0.0
Lb0	Length dependence of b0	0.0
Lb1	Length dependence of b1	0.0
Lbeta0	Length dependence of beta0	0.0
Lbgidl	Length dependence of bgidl	0.0
Lbgisl	Length dependence of bgisl	0.0
Lbigbacc	Length dependence of bigbacc	0.0
Lbigbinv	Length dependence of bigbinv	0.0
Lbigc	Length dependence of bigc	0.0
Lbigd	Length dependence of bigd	0.0
Lbigs	Length dependence of bigs	0.0
Lbigsd	Length dependence of bigsd	0.0
Lcf	Length dependence of cf	0.0
Lcdsc	Length dependence of cdsc	0.0
Lcdscb	Length dependence of cdscb	0.0
Lcdscd	Length dependence of cdscd	0.0
Lcgdl	Length dependence of cgdl	0.0
Lcgidl	Length dependence of cgidl	0.0
Lcgid	Length dependence of cgid	0.0
Lcgis	Length dependence of cgis	0.0
Lcgisl	Length dependence of cgisl	0.0
Lcgsl	Length dependence of cgsl	0.0
Lcigbacc	Length dependence of cigbacc	0.0
Lcigbinv	Length dependence of cigbinv	0.0
Lcigc	Length dependence of cigc	0.0
Lcigsd	Length dependence of cigsd	0.0
Lcit	Length dependence of cit	0.0
Lckappad	Length dependence of ckappad	0.0
Lckappas	Length dependence of ckappas	0.0
Lclc	Length dependence of clc	0.0
Lcle	Length dependence of cle	0.0
Ldelta	Length dependence of delta	0.0
Ldrout	Length dependence of drout	0.0
Ldsub	Length dependence of dsub	0.0
Ldvt0	Length dependence of dvt0	0.0
Ldvt0w	Length dependence of dvt0w	0.0
Ldvt1	Length dependence of dvt1	0.0
Ldvt1w	Length dependence of dvt1w	0.0
Ldvt2	Length dependence of dvt2	0.0
Ldvt2w	Length dependence of dvt2w	0.0
Ldvtp0	Length dependence of dvtp0	0.0
Ldvtp1	Length dependence of dvtp1	0.0
Ldwb	Length dependence of dwb	0.0
Ldwg	Length dependence of dwg	0.0
Legidl	Length dependence of egidl	0.0
Legisl	Length dependence of egisl	0.0
Leigbinv	Length dependence of eigbinv	0.0
Leta0	Length dependence of eta0	0.0
Letab	Length dependence of etab	0.0
Leu	Length dependence of eu	0.0
Lfprout	Length dependence of fprout	0.0
Lgamma1	Length dependence of gamma1	0.0
Lgamma2	Length dependence of gamma2	0.0
Lk1	Length dependence of k1	0.0
Lk2	Length dependence of k2	0.0
Lk2we	Length dependence of k2we	0.0
Lk3	Length dependence of k3	0.0
Lk3b	Length dependence of k3b	0.0
Lketa	Length dependence of keta	0.0
Lkt1	Length dependence of kt1	0.0
Lkt1l	Length dependence of kt1l	0.0
Lkt2	Length dependence of kt2	0.0
Lminvcv	Length dependence of minvcv	0.0
lkvth0	Length dependence of KVTH0	0.0
Lmoin	Length dependence of moin	0.0
Lku0we	Length dependence of KU0WE	0.0
Lndep	Length dependence of ndep	0.0
Lnfactor	Length dependence of nfactor	0.0
Lngate	Length dependence of ngate	0.0
Lnigbacc	Length dependence of nigbacc	0.0
Lnigbinv	Length dependence of nigbinv	0.0
Lnigc	Length dependence of nigc	0.0
Lnoff	Length dependence of noff	0.0
Lnsd	Length dependence of nsd	0.0
Lnsub	Length dependence of nsub	0.0
Lntox	Length dependence of ntox	0.0
Llp	Length dependence of lp	0.0
Lpclm	Length dependence of pclm	0.0
Lpdibl1	Length dependence of Pdibl1	0.0
Lpdibl2	Length dependence of Pdibl2	0.0
Lpdiblb	Length dependence of Pdiblb	0.0
Lpdits	Length dependence of pdits	0.0
Lpditsd	Length dependence of pditsd	0.0
Lphin	Length dependence of phin	0.0
Lpigcd	Length dependence of pigcd	0.0
Lpoxedge	Length dependence of poxedge	0.0
Lprt	Length dependence of prt	0.0
Lprwb	Length dependence of prwb	0.0
Lprwg	Length dependence of prwg	0.0
Lpscbe1	Length dependence of pscbe1	0.0
Lpscbe2	Length dependence of pscbe2	0.0
Lpvag	Length dependence of pvag	0.0
Lrdsw	Length dependence of rdsw	0.0
Lrdw	Length dependence of rdw	0.0
Lrsw	Length dependence of rsw	0.0
Ltvoff	Length dependence of tvoff	0.0
Ltvfbsdoff	Length dependence of tvfbsdoff	0.0
Lu0	Length dependence of u0	0.0
Lua	Length dependence of ua	0.0
Lua1	Length dependence of ua1	0.0
Lub	Length dependence of ub	0.0
Lub1	Length dependence of ub1	0.0
Luc	Length dependence of uc	0.0
Luc1	Length dependence of uc1	0.0
Lucs	Length dependence of ucs	0.0
Lucste	Length dependence of ucste	0.0
Lud	Length dependence of ud	0.0
Lud1	Length dependence of ud1	0.0
Lup	Length dependence of up	0.0
Lvbm	Length dependence of vbm	0.0
Lvbx	Length dependence of vbx	0.0
Lvfb	Length dependence of vfb	0.0
Lvfbcv	Length dependence of vfbcv	0.0
Lvfbsdoff	Length dependence of Vfbsdoff	0.0
Lvoff	Length dependence of voff	0.0
Lvoffcv	Length dependence of voffcv	0.0
Lvsat	Length dependence of vsat	0.0
Lvth0, (Lvtho)	Length dependence of vth0/vtho	0.0
Lvtl	Length dependence of ctl	0.0
Lw0	Length dependence of w0	0.0
Lwr	Length dependence of wr	0.0
Lxj	Length dependence of xj	0.0
Lxn	Length dependence of xn	0.0
Lxrcrg1	Length dependence of xrcrg1	0.0
Lxrcrg2	Length dependence of xrcrg2	0.0
Lxt	Length dependence of xt	0.0

The unit for each width-dependent parameter is the unit of the base parameter divided by Meter.

**Level 54 Width Dependence Model Parameters**
Model Parameter	Description	Default
Wa0	Width dependence of a0	0.0
Wa1	Width dependence of a1	0.0
Wa2	Width dependence of a2	0.0
Wacde	Width dependence of acde	0.0
Wagidl	Width dependence of agidl	0.0
Wagisl	Width dependence of agisl	0.0
Wags	Width dependence of ags	0.0
Waigbacc	Width dependence of aigbacc	0.0
Waigbinv	Width dependence of aigbinv	0.0
Waigc	Width dependence of aigc	0.0
Waigd	Width dependence of aigd	0.0
Waigs	Width dependence of aigs	0.0
Waigsd	Width dependence of aigsd	0.0
Wb0	Width dependence of b0	0.0
Wb1	Width dependence of b1	0.0
Wbeta0	Width dependence of beta0	0.0
Wbgidl	Width dependence of bgidl	0.0
Wbgisl	Width dependence of bgisl	0.0
Wbigbacc	Width dependence of bigbacc	0.0
Wbigbinv	Width dependence of bigbinv	0.0
Wbigc	Width dependence of bigc	0.0
Wbigd	Width dependence of bigd	0.0
Wbigs	Width dependence of bigs	0.0
Wbigsd	Width dependence of bigsd	0.0
Wcdsc	Width dependence of cdsc	0.0
Wcdscb	Width dependence of cdscb	0.0
Wcdscd	Width dependence of cdscd	0.0
Wcf	Width dependence of cf	0.0
Wcgdl/Wcgd1	Width dependence of cgdl	0.0
Wcgidl	Width dependence of cgidl	0.0
Wcgisl	Width dependence of cgisl	0.0
Wcgsl/Wcgs1	Width dependence of cgsl	0.0
Wcigbacc	Width dependence of cigbacc	0.0
Wcigbinv	Width dependence of cigbinv	0.0
Wcigc	Width dependence of cigc	0.0
Wcigd	Width dependence of cigd	0.0
Wcigs	Width dependence of cigs	0.0
Wcigsd	Width dependence of cigsd	0.0
Wcit	Width dependence of cit	0.0
Wckappad	Width dependence of ckappad	0.0
Wckappas	Width dependence of ckappas	0.0
Wclc	Width dependence of clc	0.0
Wcle	Width dependence of cle	0.0
Wdelta	Width dependence of delta	0.0
Wdrout	Width dependence of drout	0.0
Wdsub	Width dependence of dsub	0.0
Wdvt0	Width dependence of dvt0	0.0
Wdvt0w	Width dependence of dvt0w	0.0
Wdvt1	Width dependence of dvt1	0.0
Wdvt1w	Width dependence of dvt1w	0.0
Wdvt2	Width dependence of dvt2	0.0
Wdvt2w	Width dependence of dvt2w	0.0
Wdvtp0	Width dependence of dvtp0	0.0
Wdvtp1	Width dependence of dvtp1	0.0
Wdwb	Width dependence of dwb	0.0
Wdwg	Width dependence of dwg	0.0
Wegidl	Width dependence of egidl	0.0
Wegisl	Width dependence of egisl	0.0
Weigbinv	Width dependence of eigbinv	0.0
Weta0	Width dependence of eta0	0.0
Wetab	Width dependence of etab	0.0
Weu	Width dependence of eu	0.0
Wfprout	Width dependence of fprout	0.0
Wgamma1	Width dependence of gamma1	0.0
Wgamma2	Width dependence of gamma2	0.0
Wk1	Width dependence of k1	0.0
Wk2	Width dependence of k2	0.0
Wk2we	Width dependence of k2we	0.0
Wk3	Width dependence of k3	0.0
Wk3b	Width dependence of k3b	0.0
Wketa	Width dependence of keta	0.0
Wkt1	Width dependence of kt1	0.0
Wkt1l	Width dependence of kt1l	0.0
Wkt2	Width dependence of kt2	0.0
Wku0we	Width dependence of KU0WE	0.0
Wkvth0	Width dependence of kvth0	0.0
Wkvth0we	Width dependence of kvth0we	0.0
Wminvcv	Width dependence of minvcv	0.0
Wmoin	Width dependence of moin	0.0
Wndep	Width dependence of ndep	0.0
Wnfactor	Width dependence of nfactor	0.0
Wngate	Width dependence of ngate	0.0
Wnigbacc	Width dependence of nigbacc	0.0
Wnigbinv	Width dependence of nigbinv	0.0
Wnigc	Width dependence of nigc	0.0
Wnoff	Width dependence of noff	0.0
Wnsd	Width dependence of nsd	0.0
Wnsub	Width dependence of nsub	0.0
Wntox	Width dependence of ntox	0.0
Wlp	Width dependence of lp	0.0
Wpclm	Width dependence of pclm	0.0
Wpdibl1	Width dependence of Pdibl1	0.0
Wpdibl2	Width dependence of Pdibl2	0.0
Wpdiblb	Width dependence of Pdiblb	0.0
Wpdits	Width dependence of pdits	0.0
Wpditsd	Width dependence of pditsd	0.0
Wphin	Width dependence of phin	0.0
Wpigcd	Width dependence of pigcd	0.0
Wpoxedge	Width dependence of poxedge	0.0
Wprt	Width dependence of prt	0.0
Wprwb	Width dependence of prwb	0.0
Wprwg	Width dependence of prwg	0.0
Wpscbe1	Width dependence of pscbe1	0.0
Wpscbe2	Width dependence of pscbe2	0.0
Wrdsw	Width dependence of rdsw	0.0
Wrdw	Width dependence of rdw	0.0
Wrsw	Width dependence of rsw	0.0
Wtvoff	Width dependence of tvoff	0.0
Wtvfbsdoff	Width dependence of tvfbsdoff	0.0
Wu0	Width dependence of u0	0.0
Wua	Width dependence of ua	0.0
Wua1	Width dependence of ua1	0.0
Wub	Width dependence of ub	0.0
Wub1	Width dependence of ub1	0.0
Wuc	Width dependence of uc	0.0
Wuc1	Width dependence of uc1	0.0
Wucs	Width dependence of ucs	0.0
Wucste	Width dependence of ucste	0.0
Wud	Width dependence of ud	0.0
Wud1	Width dependence of ud1	0.0
Wup	Width dependence of up	0.0
Wute	Width dependence of ute	0.0
Wvbm	Width dependence of vbm	0.0
Wvbx	Width dependence of vbx	0.0
Wvfb	Width dependence of vfb	0.0
Wvfbcv	Width dependence of vfbcv	0.0
Wvfbsdoff	Width dependence of Vfbsdoff	0.0
Wvoff	Width dependence of voff	0.0
Wvoffcv	Width dependence of voffcv	0.0
Wvsat	Width dependence of vsat	0.0
Wvth0	Width dependence of vth0	0.0
Wvtl	Width dependence of VTL
Ww0	Width dependence of w0	0.0
Wwr	Width dependence of wr	0.0
Wxj	Width dependence of xj	0.0
Wxn	Width dependence of xn	0.0
Wxrcrg1	Width dependence of xrcrg1	0.0
Wxrcrg2	Width dependence of xrcrg2	0.0
Wxt	Width dependence of xt	0.0

The unit for each cross-dependent parameter is the unit of the base parameter divided by Meter².

**Level 54 MOSFET Cross Dependence Model Parameters**
Model Parameter	Description	Default
Pa0	Cross dependence of a0	0.0
Pa1	Cross dependence of a1	0.0
Pa2	Cross dependence of a2	0.0
Pacde	Cross dependence of acde	0.0
Pagidl	Cross dependence of agidl	0.0
Pagisl	Cross dependence of agisl	0.0
Pags	Cross dependence of ags	0.0
Paigbacc	Cross dependence of aigbacc	0.0
Paigbinv	Cross dependence of aigbinv	0.0
Paigc	Cross dependence of aigc	0.0
Paigd	Cross dependence of aigd	0.0
Paigs	Cross dependence of aigs	0.0
Paigsd	Cross dependence of aigsd	0.0
Palpha0	Cross dependence of alpha0	0.0
Palpha1	Cross dependence of alpha1	0.0
Pat	Cross dependence of at	0.0
Pb0	Cross dependence of b0	0.0
Pb1	Cross dependence of b1	0.0
Pbeta0	Cross dependence of beta0	0.0
Pbgidl	Cross dependence of bgidl	0.0
Pbgisl	Cross dependence of bgisl	0.0
Pbigbacc	Cross dependence of bigbacc	0.0
Pbigbinv	Cross dependence of bigbinv	0.0
Pbigc	Cross dependence of bigc	0.0
Pbigd	Cross dependence of bigd	0.0
Pbigs	Cross dependence of bigs	0.0
Pbigsd	Cross dependence of bigsd	0.0
Pcdsc	Cross dependence of cdsc	0.0
Pcdscb	Cross dependence of cdscb	0.0
Pcdscd	Cross dependence of cdscd	0.0
Pcf	Cross dependence of cf	0.0
Pcgdl/Pcgd1	Cross dependence of cgdl	0.0
Pcgidl	Cross dependence of cgidl	0.0
Pcgisl	Cross dependence of cgisl	0.0
Pcgsl/Pcgs1	Cross dependence of cgsl	0.0
Pcigbacc	Cross dependence of cigbacc	0.0
Pcigbinv	Cross dependence of cigbinv	0.0
Pcigc	Cross dependence of cigc	0.0
Pcigd	Cross dependence of cigd	0.0
Pcigs	Cross dependence of cigs	0.0
Pcigsd	Cross dependence of cigsd	0.0
Pcit	Cross dependence of cit	0.0
Pckappad	Cross dependence of ckappad	0.0
Pckappas	Cross dependence of ckappas	0.0
Pclc	Cross dependence of clc	0.0
Pcle	Cross dependence of cle	0.0
Pdelta	Cross dependence of delta	0.0
Pdibl1	Cross dependence of dibl1	0.0
Pdibl2	Cross dependence of dibl2	0.0
Pdiblb	Cross dependence of diblb	0.0
Pdrout	Cross dependence of drout	0.0
Pdsub	Cross dependence of dsub	0.0
Pdvt0	Cross dependence of dvt0	0.0
Pdvt0w	Cross dependence of dvt0w	0.0
Pdvt1	Cross dependence of dvt1	0.0
Pdvt1w	Cross dependence of dvt1w	0.0
Pdvt2	Cross dependence of dvt2	0.0
Pdvt2w	Cross dependence of dvt2w	0.0
Pdvtp0	Cross dependence of dvtp0	0.0
pdvtp1	Cross dependence of dvtp1	0.0
Pdwb	Cross dependence of dwb	0.0
Pdwg	Cross dependence of dwg	0.0
Pegidl	Cross dependence of egidl	0.0
Pegisl	Cross dependence of egisl	0.0
Peigbinv	Cross dependence of eigbinv	0.0
Peta0	Cross dependence of eta0	0.0
Petab	Cross dependence of etab	0.0
Peu	Cross dependence of eu	0.0
Pfprout	Cross dependence of fprout	0.0
Pgamma1	Cross dependence of gamma1	0.0
Pgamma2	Cross dependence of gamma2	0.0
Pk1	Cross dependence of k1	0.0
Pk2	Cross dependence of k2	0.0
Pk2we	Cross dependence of k2we	0.0
Pk3	Cross dependence of k3	0.0
Pk3b	Cross dependence of k3b	0.0
Pketa	Cross dependence of keta	0.0
Pkt1	Cross dependence of kt1	0.0
Pkt1l	Cross dependence of kt1l	0.0
Pkt2	Cross dependence of kt2	0.0
Pku0	Cross dependence of ku0	0.0
Pku0we	Cross dependence of ku0we	0.0
Pkvth0	Cross dependence of kvth0	0.0
Pkvth0we	Cross dependence of kvth0we	0.0
Plambda	Cross dependence of lambda	0.0
Plp	Cross dependence of lp	0.0
Plpe0	Cross dependence of lpe0	0.0
Plpeb	Cross dependence of lpeb	0.0
Pminv	Cross dependence of minv	0.0
Pminvcv	Cross dependence of minvcv	0.0
Pmoin	Cross dependence of moin	0.0
Pndep	Cross dependence of ndep	0.0
Pnfactor	Cross dependence of nfactor	0.0
Pngate	Cross dependence of ngate	0.0
Pnigbacc	Cross dependence of nigbacc	0.0
Pnigbinv	Cross dependence of nigbinv	0.0
Pnigc	Cross dependence of nigc	0.0
Pnoff	Cross dependence of noff	0.0
Pnsd	Cross dependence of nsd	0.0
Pnsub	Cross dependence of nsub	0.0
Pntox	Cross dependence of ntox	0.0
Ppclm	Cross dependence of pclm	0.0
Ppdiblc1 (Ppdibl1)	Cross dependence of pdiblc1/	0.0
Ppdiblc2 (Ppdibl2)	Cross dependence of pdiblc2	0.0
Ppdiblcb (Ppdiblb)	Cross dependence of pdiblcb	0.0
Ppdits	Cross dependence of pdits	0.0
Ppditsd	Cross dependence of pditsd	0.0
Pphin	Cross dependence of phin	0.0
Ppigcd	Cross dependence of pigcd	0.0
Ppoxedge	Cross dependence of poxedge	0.0
Pprt	Cross dependence of prt	0.0
Pprwb	Cross dependence of prwb	0.0
Pprwg	Cross dependence of prwg	0.0
Ppscbe1	Cross dependence of pscbe1	0.0
Ppscbe2	Cross dependence of pscbe2	0.0
Ppvag	Cross dependence of pvag	0.0
Prdsw	Cross dependence of rdsw	0.0
Prdw	Cross dependence of rdw	0.0
Prsw	Cross dependence of rsw	0.0
Prwb	Cross dependence of rwb	0.0
Ptvoff	Cross dependence of tvoff	0.0
Ptvfbsdoff	Cross dependence of tvfbsdoff	0.0
Pu0	Cross dependence of u0	0.0
Pua	Cross dependence of ua	0.0
Pua1	Cross dependence of ua1	0.0
Pub	Cross dependence of ub	0.0
Pub1	Cross dependence of ub1	0.0
Puc	Cross dependence of uc	0.0
Puc1	Cross dependence of uc1	0.0
Pucs	Cross dependence of ucs	0.0
Pucste	Cross dependence of ucste	0.0
Pud	Cross dependence of ud	0.0
Pud1	Cross dependence of ud1	0.0
Pup	Cross dependence of up	0.0
Pute	Cross dependence of ute	0.0
Pvbm	Cross dependence of vbm	0.0
Pvbx	Cross dependence of vbx	0.0
Pvfb	Cross dependence of vfb	0.0
Pvfbcv	Cross dependence of vfbcv	0.0
Pvfbsdoff	Cross dependence of Vfbsdoff	0.0
Pvoff	Cross dependence of voff	0.0
Pvoffcv	Cross dependence of voffcv	0.0
Pvsat	Cross dependence of vsat	0.0
Pvth0, (Pvtho)	Cross dependence of vth0/vtho	0.0
Pvtl	Cross dependence of vtl	0.0
Pw0	Cross dependence of w0	0.0
Pwr	Cross dependence of wr	0.0
Pxj	Cross dependence of xj	0.0
Pxn	Cross dependence of xn	0.0
Pxrcrg1	Cross dependence of xrcrg1	0.0
Pxrcrg1	Cross dependence of xrcrg2	0.0
Pxt	Cross dependence of xt	0.0

BSIM4 MOSFET Model Netlist Example

.MODEL N1 NMOS LEVEL=54

+VERSION=4.3.0 BINUNIT=1 PARAMCHK=1 MOBMOD=0

+CAPMOD=2 IGCMOD=1 IGBMOD=1 GEOMOD=1

+DIOMOD=1 RDSMOD=0 RBODYMOD=0 RGATEMOD=1

+PERMOD=1 ACNQSMOD=0 TRNQSMOD=0 TEMPMOD=0

+TNOM=27 TOXE=1.8E-009 TOXP=10E-010 TOXM=1.8E-009

+DTOX=8E-10 EPSROX=3.9 WINT=5E-009 LINT=1E-009

+LL=0 WL=0 LLN=1 WLN=1

+LW=0 WW=0 LW=1 WWN=1

+LWL=0 WWL=0 XPART=0 TOXREF=1.4E-009

+SAREF=5E-6 SBREF=5E-6 WLOD=2E-6 KU0=-4E-6

+KVSAT=0.2 KVTH0=-2E-8 TKU0=0.0 LLODKU0=1.1

+WLODKU0=1.1 LLODVTH=1.0 WLODVTH=1.0 LKU0=1E-6

+WKU0=1E-6 PKU0=0.0 LKVTH0=1.1E-6 WKVTH0=1.1E-6

+PKVTH0=0.0 STK2=0.0 LODK2=1.0 STETA0=0.0

+LODETA0=1.0

+LAMBDA=4E-10

+VSAT=1.1E+005

+VTL=2.0E5 XN=6.0 LC=5E-9

+RNOIA=0.577 RNOIB=0.37

+VTH0= 0.25

+K1=0.35 K2=0.05 K3=0

+K3B=0 W0=2.5E-006 DVT0=1.8 DVT1=0.52

+DVT2=-0.032 DVT0W=0 DVT1W=0 DVT2W=0

+DSUB=2 MINV=0.05 VOFFL=0 DVTP0=1E-007

+DVTP1=0.05 LPE0=5.75E-008 LPEB=2.3E-010 XJ=2E-008

+NGATE=5E+020 NDEP=2.8E+018 NSD=1E+020 PHIN=0

+CDSC=0.0002 CDSCB=0 CDSCD=0 CIT=0

+VOFF=-0.15 NFACTOR=1.2 ETA0=0.05 ETAB=0

+UC=-3E-011

+VFB=-0.55 U0=0.032 UA=5.0E-011 UB=3.5E-018

+A0=2 AGS=1E-020

+A1=0 A2=1 B0=-1E-020 B1=0

+KETA=0.04 DWG=0 DWB=0 PCLM=0.08

+PDIBLC1=0.028 PDIBLC2=0.022 PDIBLCB=-0.005 DROUT=0.45

+PVAG=1E-020 DELTA=0.01 PSCBE1=8.14E+008 PSCBE2=5E-008

+FPROUT=0.2 PDITS=0.2 PDITSD=0.23 PDITSL=2.3E+006

+RSH=0 RDSW=50 RSW=150 RDW=150

+RDSWMIN=0 RDWMIN=0 RSWMIN=0 PRWG=0

+PRWB=6.8E-011 WR=1 ALPHA0=0.074 ALPHA1=0.005

+BETA0=30 AGIDL=0.0002 BGIDL=2.1E+009 CGIDL=0.0002

+EGIDL=0.8

+AIGBACC=0.012 BIGBACC=0.0028 CIGBACC=0.002

+NIGBACC=1 AIGBINV=0.014 BIGBINV=0.004 CIGBINV=0.004

+EIGBINV=1.1 NIGBINV=3 AIGC=0.012 BIGC=0.0028

+CIGC=0.002 AIGSD=0.012 BIGSD=0.0028 CIGSD=0.002

+NIGC=1 POXEDGE=1 PIGCD= 1 NTOX=1

+XRCRG1=12 XRCRG2=5

+CGSO=6.238E-010 CGDO=6.238E-010 CGBO=2.56E-011 CGDL=2.495E-10

+CGSL=2.495E-10 CKAPPAS=0.03 CKAPPAD=0.03 ACDE=1

+MOIN=15 NOFF=0.9 VOFFCV=0.02

+KT1=-0.37 KT1L=0.0 KT2=-0.042 UTE=-1.5

+UA1=1E-009 UB1=-3.5E-019 UC1=0 PRT=0

+AT=53000

+FNOIMOD=1 TNOIMOD=0

+JSS=0.0001 JSWS=1E-011 JSWGS=1E-010 NJS=1

+IJTHSFWD= 0.01 IJTHSREV= 0.001 BVS = 10 XJBVS = 1

+JSD=0.0001 JSWD=1E-011 JSWGD=1E-010 NJD=1

+IJTHDFWD=0.01 IJTHDREV=0.001 BVD=10 XJBVD=1

+PBS=1 CJS=0.0005 MJS=0.5 PBSWS=1

+CJSWS=5E-010 MJSWS=0.33 PBSWGS=1 CJSWGS=3E-010

+MJSWGS=0.33 PBD=1 CJD=0.0005 MJD=0.5

+PBSWD=1 CJSWD=5E-010 MJSWD=0.33 PBSWGD=1

+CJSWGD=5E-010 MJSWGD=0.33 TPB=0.005 TCJ=0.001

+TPBSW=0.005 TCJSW=0.001 TPBSWG=0.005 TCJSWG=0.001

+XTIS=3 XTID=3

+DMCG=0E-006 DMCI=0E-006 DMDG=0E-006 DMCGT=0E-007

+DWJ=0.0E-008 XGW=0E-007 XGL=0E-008

+RSHG=0.4 GBMIN=1E-010 RBPB=5 RBPD=15

+RBPS=15 RBDB=15 RBSB=15 NGCON=1

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