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MOSFET Levels 49 through 54 >
MOSFET Instance, BSIM4 Model (Level 54)

MOSFET Instance, BSIM4 Model (Level 54)

This level implements the University of California, Berkeley, BSIM4.3.0 MOSFET model.

BSIM4 MOSFET Instance Netlist Syntax

The syntax for a LEVEL=54 BSIM4 MOSFET instance is:

Mxxxx nd ng ns [nb] modelname [L=length] [W=width]

[ACNQSMOD=val] [AD=val] [AS=val] [GEO=val] [GEOMOD=val]

[M=val] [MIN=val] [NF=val] [NRD=val] [NRS=val]

[PD=val] [PS=val]

[RBODYMOD=val] [RGATEMOD=val] [RGEOMOD=val] [TRNQSMOD=val]

[RBDB=val] [RBPB=val] [RBPD=val] [RBPS=val] [RBSB=val]

[SA=val] [SB=val] [SD=val] [MULU0=val] [DELVTO=val]

[TNOM=val] [DTEMP=val] [SCALE=val]

[OFF=val] [ICVDS=val] [ICVGS=val] [ICVBS=val]

[RDC=val] [RSC=val] [SCA=val] [SCB=val] [SCC=val] [SC=val] [XGW=val] [NGCON=val]

nd is the drain node, ng is the gate node, ns is the source node, and nb is the bulk or substrate node of the MOSFET. modelname is the name of a BSIM4 MOSFET model defined in a .MODEL statement elsewhere in the netlist.

When the option WL is in effect (on the .OPTION statement), the syntax becomes:

Mxxxx nd ng ns [nb] modelname [width] [length]

[ACNQSMOD=val] [AD=val] [AS=val] [GEO=val] [GEOMOD=val]

[M=val] [MIN=val] [NF=val] [NRD=val] [NRS=val]

[PD=val] [PS=val]

[RBODYMOD=val] [RGATEMOD=val] [RGEOMOD=val] [TRNQSMOD=val]

[RBDB=val] [RBPB=val] [RBPD=val] [RBPS=val] [RBSB=val]

[SA=val] [SB=val] [SD=val] [MULU0=val] [DELVTO=val]

[TNOM=val] [DTEMP=val] [SCALE=val]

**Level 54 MOSFET Instance Parameters**
Instance Parameter	Description	Unit	Default
ACNQSMOD	AC small-signal NQS model selector	None	0
AD	Drain diffusion area	Meter²	0
AS	Source diffusion area	Meter²	0
DELVTO	Shift in VTH0	Volt	0.0
DTEMP	Difference between device and circuit temperature NOTE: DTEMP is supported only in netlists for Release 3.5.	°C	0.0
GEOMOD	Geometry-dependent parasitics model selector, specifying how the end source/drain diffusions are connected 0 = Isolated 1 = shared drain 2 = shared source 3 = shared source and drain	None	0 (isolated)
ICVBS	Initial Vbs voltage	Volt	0
ICVDS	Initial Vds voltage	Volt	0
ICVGS	Initial Vgs voltage	Volt	0
L	Physical gate length	Meter	5.0e-6
M	Multiplier: simulates parallel transistors	None	1.0
MIN	Flag to minimize the number of drain or source diffusions for even-fingered device	None	0
MULU0	Mobility multiplier	None	1.0
NF	Number of device fingers	None	1
NGCON	Number of gate contacts	None	1
NRD	Number of drain diffusion squares	Square	1
NRS	Number of source diffusion squares	Square	1
OFF	Flag to indicate that device is initially off	None	0
PD	Drain diffusion periphery	Meter	0
PS	Source diffusion periphery	Meter	0
RBDB	Resistance connected between dbNode and bNode	Ohm	50.0
RBODYMOD	Substrate resistance network model selector 0 = Network off	None	0
RBPB	Resistance connected between bNodePrime and bNode	Ohm	50.0
RBPD	Resistance connected between bNodePrime and dbNode	Ohm	50.0
RBPS	Resistance connected between bNodePrime and sbNode	Ohm	50.0
RBSB	Resistance connected between sbNode and bNode	Ohm	50.0
RDC	Drain contact resistance	Ohm	0
RGATEMOD	Gate resistance model selector 0 = No gate resistance	None	0
RGEOMOD	Source/drain diffusion resistance and contact model selector	None	0 (no source/drain diffusion resistance
RSC	Source contact resistance	Ohm	0
SA	Distance from OD edge to poly on one side	Meter	0.0
SB	Distance from OD edge to poly on other side	Meter	0.0
SC	Distance to a single edge	Meter	0
SC	Distance to a single edge	Meter	0.0
SCA	Integral of the first distribution function for scattered well dopant	None	Calculated
SCA	Integral of the first distribution function for scattered well dopant
SCALE	Element scaling parameter	None	1.0
SCB	Integral of the second distribution function for scattered well dopant	None	Calculated
SCB	Integral of the second distribution function for scattered well dopant
SCC	Integral of the third distribution function for scattered well dopant	None	Calculated
SCC	Integral of the third distribution function for scattered well dopant
SD	Distance between neighboring fingers	Meter	0.0
TNOM	Temperature at which parameters are extracted	°C	25
TRNQSMOD	Transient NQS model selector	None	0 (Off)
W	Physical gate width	Meter	5.0e-6
XGW	Distance from the gate contact to the channel edge	Meter	0.0

BSIM4 MOSFET Instance Netlist Example

M1 10 11 12 mosfet54

M12 G3 VDD 0 0 mosfet54 M=2 DTEMP=30

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