Level 50 MOSFET Model
Parameters
Model Parameter
|
Description
|
Unit
|
Default
|
LEVEL
|
50 is required to select the Philips
MOS9 MOSFET model
|
None
|
1 (default if LEVEL parameter is
omitted)
|
VERSION
|
903 selects the Philips MOSFET
903 Model
|
None
|
903
|
A1R
|
Weak-avalanche current factor for
the reference transistor at the reference temperature
|
None
|
NMOS: 6.0
PMOS: 10.0
|
A2R
|
Weak-avalanche current exponent
for the reference transistor
|
Volt
|
NMOS: 38.0
PMOS: 59.0
|
A3R
|
Factor of drain-source voltage
above which above which weak-avalanche occurs, for the reference transistor
|
None
|
NMOS: 0.65
PMOS: 0.52
|
ALPR
|
Channel length modulation factor
for the reference transistor
|
None
|
NMOS: 0.003
PMOS: 0.044
|
BETSQ
|
Gain factor of infinite square
transistor at the reference temperature
|
Amp/Volt2
|
NMOS: 83.0e-6
PMOS: 26.1e-6
|
COL
|
Gate overlap capacitance per unit
channel width
|
Farad/Meter
|
0.320e-9
|
ETAALP
|
Exponent of length dependence of
a
|
None
|
NMOS: 0.15
PMOS: 0.17
|
ETABET
|
Exponent of the temperature dependence
of the gain factor
|
None
|
1.6
|
ETADSR
|
Exponent of the VDS dependence
of g1 for the reference transistor
|
None
|
0.6
|
ETAGAMR
|
Exponent of back-bias dependence
of g0 for the reference transistor
|
None
|
NMOS: 2.0
PMOS: 1.0
|
ETAMR
|
Exponent of back-bias dependence
of M for the reference transistor
|
None
|
NMOS: 2.0
PMOS: 1.0
|
ETAZET
|
Exponent of length dependence of
z1
|
None
|
NMOS: 0.17
PMOS: 0.03
|
FBET1
|
Relative mobility decrease due
to first profile
|
None
|
0.0
|
FBET2
|
Relative mobility decrease due
to second profile
|
None
|
0.0
|
FTHE1
|
Coefficient describing the width
dependence of Q1 for W < WDOG
|
None
|
0.0
|
GAM1R
|
Drain-induced threshold shift for
high gate drive
|
None
|
NMOS: 0.145
PMOS: 0.077
|
GAMOOR
|
Drain-induced threshold shift coefficient
for large gate drive for the reference transistor
|
Volt**(1-hDS)
|
NMOS: 0.018
PMOS: 0.007
|
GTHE1
|
Selector for Q1
scaling rule
0 = old, 1=new
|
None
|
0.0
|
KOR
|
Low-back-bias body factor for the
reference transistor
|
Volt½
|
NMOS: 0.65
PMOS: 0.470
|
KR
|
High-back-bias body factor for
the reference transistor
|
Volt½
|
NMOS: 0.11
PMOS: 0.470
|
LAP
|
Effective channel length reduction
per side due to the lateral diffusion of the source/drain dopant ions
|
Meter
|
NMOS: 0.100e-6
PMOS: 0.025e-6
|
LER
|
Effective channel length of the
reference transistor
|
Meter
|
NMOS: 1.1e-6
PMOS: 1.25e-6
|
LP1
|
Characteristic length of first
profile
|
Meter
|
1.0e-6
|
LP2
|
Characteristic length of second
profile
|
Meter
|
1.0e-8
|
LVAR
|
Difference between the actual and
the programmed polysilicon gate length
|
Meter
|
NMOS: -0.22e-6
PMOS: -0.460e-6
|
MOR
|
Subthreshold slope factor for the
reference transistor at the reference temperature
|
None
|
NMOS: 0.5
PMOS: 0.375
|
NFAR
|
1st flicker noise coefficient of
the reference transistor (NFMOD=1)
|
1/Volt-Meter4
|
NMOS: 7.15e+22
PMOS: 1.53e+22
|
NFBR
|
2nd flicker noise coefficient of
the reference transistor (NFMOD=1)
|
1/Volt-Meter2
|
NMOS: 2.16e+7
PMOS: 4.06e+6
|
NFCR
|
3rd flicker noise coefficient of
the reference transistor (NFMOD=1)
|
1/Volt
|
NMOS: 0.0
PMOS: 2.92e-10
|
NFMOD
|
Flicker noise switch
0 selects old flicker noise model
1 selects new flicker noise model
|
None
|
0.0
|
NFR
|
Flicker noise coefficient of the
reference transistor (NFMOD=0)
|
Volt2
|
NMOS: 0.7e-10
PMOS: 0.214e-10
|
NTR
|
Thermal noise coefficient for the
reference transistor
|
Joule
|
NMOS: 0.244e-19
PMOS: 0.211e-19
|
PHIBR
|
Strong inversion surface potential
for the reference transistor at the reference temperature
|
Volt
|
0.65
|
SL2GAMOO
|
2nd coefficient of the length dependence
of g00
|
None
|
0.0
|
SL2K
|
2nd coefficient of the length dependence
of K
|
Volt½-Meter2
|
0.0
|
SL2KO
|
2nd coefficient of the length dependence
of K0
|
Volt½-Meter2
|
0.0
|
SL2VTO
|
2nd length coefficient of the dependence
of VTO
|
Volt-Meter2
|
0.0
|
SL3VTO
|
3rd coefficient of the length dependence
of VTO
|
Volt
|
0.0
|
SLA1
|
Length coefficient of the dependence
of a1
|
Meter
|
NMOS: 1.3e-6
PMOS: -15.0e-6
|
SLA2
|
Length coefficient of the dependence
of a2
|
Volt-Meter
|
NMOS: 1.0e-6
PMOS: -8.0e-6
|
SLA3
|
Length coefficient of the dependence
of a3
|
Meter
|
NMOS: -0.550e-6
PMOS: -0.450e-6
|
SLALP
|
Coefficient of length dependence
of a
|
Meter**(ha)
|
NMOS: -5.65e-3
PMOS: 9.0e-3
|
SLGAM1
|
Coefficient of the length dependence
of g1
|
None
|
NMOS: 0.160e-6
PMOS: 0.105e-6
|
SLGAMOO
|
Coefficient of the length dependence
of g00
|
Meter2
|
NMOS: 20.0e-15
PMOS: 11.0e-15
|
SLK
|
Coefficient of the length dependence
of K
|
Volt½-Meter
|
NMOS: -0.280e-6
PMOS: -0.200e-6
|
SLKO
|
Coefficient of the length dependence
of K0
|
Volt½-Meter
|
NMOS: -0.130e-6
PMOS: -0.200e-6
|
SLMO
|
Coefficient of the length dependence
of M0
|
Meter½
|
NMOS: 0.280e-3
PMOS: 0.047e-3
|
SLTHE1R
|
Coefficient of the length dependence
of Q1 at the reference temperature
|
Meter/Volt
|
NMOS: 0.140e-6
PMOS: 0.070e-6
|
SLTHE2R
|
Coefficient of the length dependence
of Q2 at the reference temperature
|
Meter/Volt½
|
NMOS: -0.033e-6
PMOS: -0.075e-6
|
SLTHE3R
|
Coefficient of the length dependence
of Q3 at the reference temperature
|
Meter/Volt
|
NMOS: 0.185e-6
PMOS: 0.027e-6
|
SLVSBT
|
Coefficient of the length dependence
of VSBT
|
Volt-Meter
|
NMOS: -4.43e-6
PMOS: 0.0
|
SLVSBX
|
Coefficient of the length dependence
of VSBX
|
Volt-Meter
|
0.0
|
SLVTO
|
Coefficient of the length dependence
of VTO
|
Volt-Meter
|
NMOS: -0.135e-6
PMOS: 0.035e-6
|
SLZET1
|
Coefficient of the length dependence
of z1
|
Meter**(hz)
|
NMOS: -0.39
PMOS: -2.8
|
STA1
|
Coefficient of the temperature
dependence of a1
|
°K-1
|
0.0
|
STLTHE1
|
Coefficient of the temperature
dependence of the length dependence of Q1
|
Meter/Volt-°K
|
0.0
|
STLTHE2
|
Coefficient of the temperature
dependence of the length dependence of Q2
|
Meter/Volt½-°K
|
0.0
|
STLTHE3
|
Coefficient of the temperature
dependence of the length dependence of Q3
|
Meter/Volt-°K
|
NMOS: -0.62e-9
PMOS: 0.0
|
STMO
|
Coefficient of the temperature
dependence coefficient of M0
|
°K-1
|
0.0
|
STTHE1R
|
Coefficient of the temperature
dependence of Q1 for the reference transistor
|
1/Volt-°K
|
0.0
|
STTHE2R
|
Coefficient of the temperature
dependence of Q2 for the reference transistor
|
1/Volt½-°K
|
0.0
|
STTHE3R
|
Coefficient of the temperature
dependence of Q3 for the reference transistor
|
1/Volt-°K
|
NMOS: -0.66e-3
PMOS: 0.0
|
STVTO
|
Coefficient of the temperature
dependence of VTO
|
Volt/°K
|
NMOS: -1.2e-3
PMOS: -1.7e-3
|
SWA1
|
Coefficient of the width dependence
of a1
|
Meter
|
NMOS: 3.0e-6
PMOS: 30.0e-6
|
SWA2
|
Coefficient of the width dependence
of a2
|
Volt-Meter
|
NMOS: 2.0e-6
PMOS: 15.0e-6
|
SWA3
|
Coefficient of the width dependence
of a3
|
Meter
|
NMOS: 0.0
PMOS: -0.140e-6
|
SWALP
|
Coefficient of the width dependence
of a
|
Meter
|
NMOS: 1.67e-9
PMOS: 0.180e-9
|
SWGAM1
|
Coefficient of the width dependence
of g1
|
Volt**(1-hDS)-Meter
|
NMOS: -0.010e-6
PMOS: -0.011e-6
|
SWK
|
Coefficient of the width dependence
of K
|
Volt½-Meter
|
NMOS: 0.275e-6
PMOS: 0.115e-6
|
SWKO
|
Coefficient of the width dependence
of KO
|
Volt½-Meter
|
NMOS: 0.002e-6
PMOS: 0.115e-6
|
SWTHE1
|
Coefficient of the width dependence
of Q1
|
Meter/Volt
|
NMOS: -0.058e-6
PMOS: -0.080e-6
|
SWTHE2
|
Coefficient of the width dependence
of Q2
|
Meter/Volt½
|
NMOS: 0.030e-6
PMOS: 0.020e-6
|
SWTHE3
|
Coefficient of the width dependence
of Q3
|
Meter/Volt
|
NMOS: 0.020e-6
PMOS: 0.011e-6
|
SWVSBX
|
Coefficient of the width dependence
of VSBX
|
Volt-Meter
|
NMOS: -0.675e-6
PMOS: 0.0
|
SWVTO
|
Coefficient of the width dependence
of VTO
|
Volt-Meter
|
NMOS: 0.130e-6
PMOS: 0.050e-6
|
TH3MOD
|
Switch that activates Q3
clipping
|
None
|
1
|
THE1R
|
Coefficient of the mobility reduction
due to the gate-induced field for the reference transistor at the reference
temperature
|
Volt-1
|
0.190
|
THE2R
|
Coefficient of the mobility reduction
due to the back-bias for the reference transistor at the reference temperature
|
Volt½
|
NMOS: 0.012
PMOS: 0.165
|
THE3R
|
Coefficient of the mobility reduction
due to the lateral field for the reference transistor at the reference
temperature
|
Volt-1
|
NMOS: 0.145
PMOS: 0.027
|
TOX
|
Gate oxide layer thickness
|
Meter
|
25.0e-9
|
TR
|
Temperature at which the parameters
for the reference transistor have been determined
|
°C
|
21.0
|
VPR
|
Characteristic voltage of the channel
length modulation for the reference transistor
|
Volt
|
NMOS: 0.34
PMOS: 0.235
|
VSBTR
|
Limiting voltage of the VSB dependence of M and g0
|
Volt
|
NMOS: 2.1
PMOS: 100.0
|
VSBXR
|
Transition voltage for dual-k-factor
model for the reference transistor
|
Volt
|
NMOS: 0.66
PMOS: 1.0e-12
|
VTOR
|
Threshold voltage at zero back-bias
for the reference transistor at the reference temperature
|
Volt
|
NMOS: 0.73
PMOS: 1.1
|
WDOG
|
Characteristic drawn gate width
below which dogboning appears
|
Meter
|
0.0
|
WER
|
Effective channel width of the
reference transistor
|
Meter
|
NMOS: 20.0e-6
PMOS: 20.0e-6
|
WOT
|
Effective reduction of the channel
width per side due to the lateral diffusion of the channel-stop dopant
ion
|
Meter
|
0.0
|
WVAR
|
Difference between the actual and
the programmed field-oxide opening
|
Meter
|
NMOS: -0.025e-6
PMOS: -0.130e-6
|
ZET1R
|
Weak-inversion correction factor
for the reference transistor
|
None
|
NMOS: 0.42
PMOS: 1.3
|
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