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Ansoft Designer / Ansys Designer 在线帮助文档：

Nexxim Simulator >
Nexxim Component Models >
MOSFET Levels 49 through 54 >
   MOSFET Instance, Philips MOS903 Geometrical Model (Level 50)       

MOSFET Instance, Philips MOS903 Geometrical Model (Level 50)

 

Philips MOS903 Geometrical MOSFET Instance Netlist Syntax

The syntax for a Level 50 Philips MOS903 MOSFET instance is:

Mxxxx nd ng ns [nb] modelname [L=length] [W=width]

[DTEMP=val] [DTA=val] [MULT=val]

nd is the drain node, ng is the gate node, ns is the source node, and nb is the bulk or substrate node of the MOSFET. modelname is the name of a Level 50 MOSFET model defined in a .MODEL statement elsewhere in the netlist.

When the option WL is in effect (on the .OPTION statement), the syntax becomes:

Mxxxx nd ng ns [nb] modelname [width] [length]

[DTEMP=val] [DTA=val] [MULT=val]

 


Level 50 MOSFET Instance Parameters

Instance Parameter

Description

Unit

Default

DTA

Temperature offset of the device with respect to TA

°C

0.0

DTEMP

Difference between circuit and MOSFET temperature

°C

0.0

L

Drawn channel length in the layout of the actual transistor

Meter

1.5e-6

MULT

Number of devices in parallel

None

1.0

W

Drawn channel width in the layout of the actual transistor

Meter

20.0e-6

 

Philips MOS903 MOSFET Instance Netlist Example

M17 5 3 0 0 MNXM17 L=2.5E-007 W=1E-006



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