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Nexxim Simulator >
Nexxim Component Models >
MOSFET Levels 49 through 54 >
MOSFET Instance, BSIM3v3 Models (Level 49 or 53)

MOSFET Instance, BSIM3v3 Models (Level 49 or 53)

BSIM3v3 MOSFET Instance Netlist Syntax

The syntax for an Ansoft Enhanced BSIM3v3 (HSPICEÔ Level 49) or Berkeley standard BSIM3v3 (HSPICEÔ Level 53) MOSFET instance is:

Mxxxx nd ng ns [nb] modelname [[L=]length] [[W=]width]

[AD=val] [AS=val] [PD=val] [PS=val] [NRD=val] [NRS=val]

[MULU0=val] [MULUA=val] [MULUB=val]

[M=val] [DELVTO=val] [DTEMP=val] [SCALE=val]

nd is the drain node, ng is the gate node, ns is the source node, and nb is the bulk or substrate node of the MOSFET. modelname is the name of a Level 49 or 53 MOSFET model defined in a .MODEL statement elsewhere in the netlist.

When the option WL is in effect (on the .OPTION statement), the syntax becomes:

Mxxxx nd ng ns [nb] modelname [width] [length]

[AD=val] [AS=val] [PD=val] [PS=val] [NRD=val] [NRS=val]

[MULU0=val] [MULUA=val] [MULUB=val]

[M=val] [DELVTO=val] [DTEMP=val] [SCALE=val]

**Level 49/53 MOSFET Instance Parameters**
Instance Parameter	Description	Unit	Default
AD	Drain area	Meter²	0.0
AS	Source area	Meter²	0.0
DELVTO	Shift in zero-bias threshold voltage vth0. Value must be a real scalar	Volt	0.0
DTEMP	Temperature difference between circuit and device	°C	0.0
L	Physical gate length	Meter	10.0e-6
M	Multiplier to simulate transistors in parallel	None	1.0
MULU0	Low-field mobility multiplier	None	1.0
MULUA	First-order mobility multiplier	None	1.0
MULUB	Second-order mobility multiplier	None	1.0
NRD	Relative resistivity of drain	Square	0.0
NRS	Relative resistivity of source	Square	0.0
PD	Drain perimeter	Meter	0.0
PS	Source perimeter	Meter	0.0
SA	Distance between OD edge to poly from one side	Meter	0.0
SB	Distance between OD edge to poly from the other side	Meter	0.0
SCALE	Scale factor for instance parameters	None	1.0 (or global SCALE option)
W	Physical gate width	Meter	100.0e-6

BSIM3v3 MOSFET Instance Netlist Example

M1 10 11 12 mosfet1

M12 G3 VDD 0 0 mosfet2 M=2

Mtest 34 56 78 90 fetex

BSIM3v3 Output Quantities

The BSIM3v3 instance can output the quantities listed in the table below. The output quantities are the values of model parameters and the values of variables that are calculated internally to the model.

In the Schematic Editor, you request Nexxim to create these outputs with the Output Quantities selection on the Solution Setup dialogs.

In a netlist, you request Nexxim to create these outputs with the following statement:

.PRINT O(instance_name)

Where instance_name identifies the device instance in the netlist, shown as Mxxxx in the netlist syntax.

**BSIM3v3 Output Quantities**
Output Code	Parameter or Variable	Description	Unit
LV1	L	Effective length	Meter
LV2	W	Effective width	Meter
LV3	AD	Effective drain area	Meter²
LV4	AS	Effective source area	Meter²
LV9	VTH	Threshold voltage	Volt
LV10	VDSAT	Saturation voltage	Volt
LV11	PD	Drain diode perimeter	Meter
LV12	PS	Source diode perimeter	Meter
LV13	RDS	Drain resistance	Square
LV14	RSS	Source resistance	Square
LV15	XQC	Charge-sharing coefficient	None
LV16	GDEFF	Effective drain conductance for RGEOMOD!=0	Mho
LV17	GSEFF	Effective source conductance for RGEOMOD!=0	Mho
LV18	CDSAT	Drain-bulk saturation current at -1V	Amp
LV19	CSSAT	Drain-source saturation current at -1V	Amp
LV20	VDBEFF	Effective drain-bulk voltage	Volt
LV21	BETAEFF	BETA effective	Volt
LV22	GAMMAEFF	GAMMA effective	Volt^0.5
LV24	UBEFF	UB effective	(Meter/Volt)^0.5
LV26	VFBEFF	VFB effective	Volt
LX1	VBS	Bulk-source voltage	Volt
LX2	VGS	Gate-source voltage	Volt
LX3	VDS	Drain-source voltage	Volt
LX4	CDO	DC drain current	Amp
LX5	CBSO	DC source-bulk diode current	Amp
LX6	CBDO	DC drain-bulk diode current	Amp
LX7	GMO	DC gate transconductance	Mho
LX8	GDSO	DC drain-source transconductance	Mho
LX9	GMBSO	DC substrate transconductance	Mho
LX10	GBDO	Conductance of the drain diode	Mho
LX11	GBSO	Conductance of the source diode	Mho
LX12	QB	Total bulk charge	Coulomb
LX13	CQB	Total bulk charge current	Amp
LX14	QG	Total gate charge	Coulomb
LX15	CQG	Total gate charge current	Amp
LX16	QD	Total drain charge	Coulomb
LX17	CQD	Total drain charge current	Amp
LX18	CGGBO	Intrinsic gate capacitance (CGS + CGD + CGB)	Farad
LX19	CGDBO	Intrinsic gate-to-drain capacitance (-dqg_dvd)	Farad
LX20	CGSBO	Intrinsic gate-to-source capacitance (-dqg_dvs)	Farad
LX21	CBGBO	Intrinsic bulk-to-gate capacitance (-dqb_dvg)	Farad
LX22	CBDBO	Intrinsic bulk-to-drain capacitance (-dqb_dvd)	Farad
LX23	CBSBO	Intrinsic bulk-to-source capacitance (-dqb_dvs)	Farad
LX24	QBD	Drain-bulk charge	Coulomb
LX26	QBS	Source-bulk charge	Coulomb
LX28	CAP_BS	Bias-dependent bulk-source capacitance	Farad
LX29	CAP_BD	Bias-dependent bulk-drain capacitance	Farad
LX32	CDGBO	Intrinsic gate-to-drain capacitance (-dqd_dvg)	Farad
LX33	CDDBO	Intrinsic drain capacitance (-dqd_dvd)	Farad
LX34	CDSBO	Intrinsic drain-to-source capacitance (-dqd_dvs)	Farad
LX55	QSRCO	Total charge (QG + QB + QD)	Coulomb
LX97	QGI	Intrinsic gate charge	Coulomb
LX98	QSI	Intrinsic source charge	Coulomb
LX99	QDI	Intrinsic drain charge	Coulomb
LX100	QBI	Intrinsic bulk charge	Coulomb
LX101	CDDBI	Intrinsic drain capacitance	Farad
LX102	CBDBI	Intrinsic bulk-to-drain capacitance	Farad
LX103	CBSBI	Intrinsic bulk-to-source capacitance	Farad

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