淘宝官方店推荐课程在线工具联系方式关于我们

	微波射频仿真设计 Ansoft Designer 中文培训教程 \| HFSS视频培训教程套装
	Agilent ADS 视频培训教程 \| CST微波工作室视频教程 \| AWR Microwave Office

首页 >> Ansoft Designer >> Ansoft Designer在线帮助文档

Ansoft Designer / Ansys Designer 在线帮助文档：

Nexxim Simulator >
Nexxim Component Models >
MOSFET Levels 1 through 27 >
SPICE 2G Empirical MOSFET Model, Level 3

SPICE 2G Empirical MOSFET Model, Level 3

The netlist syntax for a Level 3 MOSFET model is:

.MODEL modelname NMOS LEVEL=3 [(][parameter=val] ... [)]

.MODEL modelname PMOS LEVEL=3 [(][parameter=val] ... [)]

modelname is the name used by MOSFET instances to refer to this .MODEL statement. The LEVEL=3 entry selects the IDS empirical MOSFET model.

**Level 3 MOSFET Basic Model Parameters**
Model Parameter	Description	Unit	Default
LEVEL	3 is required to select the Empirical MOSFET model	None	1 (default if LEVEL parameter is omitted)
ACM	Area calculation method selector 0 = SPICE model, parameters depend on element areas 1 = ASPEC model, parameters depend on element width 2 = HSPICE model (combines ACM 0 and 1, extensions for lightly-doped drain technology 3 = HSPICE method, ACM 2 plus shared sources and drains and gate-edge source/drain peripheral capacitances	None	0
ALPHA	Impact ionization current coefficient	None	0.0
CAPOP	Capacitance model selector	None	2
COX (CO)	Oxide capacitance per unit of gate area	Farad/Meter²	Calculated
IIRAT	Portion of impact ionization current that goes to source	None	0.0
LALPHA	Alpha length sensitivity	mMeter/Volt	0.0
LVCR	VCR length sensitivity	mMeter/Volt	0.0
KAPPA	Saturation field factor	Volt^-1	0.2
KP (BETA, BET)	Intrinsic transconductance parameter	Amp/Volt²	Calculated
N	Emission coefficient	None	1.0
NDS	Reverse bias slope coefficient	None	1.0
SCALM	Model parameter scale factor (also an option for .OPTIONs statement)	None	1.0
TNOM	Nominal device temperature	°C	25
TPG (TPS)	Type of gate material 0 = Aluminum gate 1 = Polysilicon gate same as source-drain diffusion -1 = Polysilicon gate opposite to source-drain diffusion	None	1
TT	Transit time	Second	0.0
UPDATE	Update selector for parasitics model	None	0.0
VCR	Critical voltage	Volt	0.0
VNDS	Reverse diode current transition point	Volt	-1.0
WALPHA	Alpha width sensitivity	mMeter/Volt	0.0
WVCR	VCR width sensitivity	mMeter/Volt	0.0

**Level 3 MOSFET DC Model Parameters**
Model Parameter	Description	Unit	Default
IS	Bulk junction saturation current	Amp	1.0e-14
JS	Bulk junction saturation current density	Amp/Meter²	0.0
JSW	Sidewall bulk junction saturation current	Amp/Meter	0.5

**Level 3 MOSFET Capacitance Model Parameters**
Model Parameter	Description	Unit	Default
CBD	Zero-bias bulk-drain junction capacitance	Farad	0.0
CBS	Zero-bias bulk-source junction capacitance	Farad	0.0
CJ (CJB, CSB, CJA)	Zero-bias bulk junction bottom capacitance	Farad/Meter²	Calculated
CJGATE	Zero-bias gate-edge sidewall bulk junction capacitance (ACM = 3)	Farad/Meter	CJSW
CJSW (CJP)	Zero-bias bulk junction sidewall capacitance	Farad/Meter	0.0
FC	Forward-bias depletion coefficient for capacitance	None	0.0
MJ (EXA, EXJ, EXS, EXD)	Bulk junction capacitance grading coefficient	None	0.5
MJSW	Bulk junction sidewall capacitance grading coefficient	None	0.33
NSUB	Substrate doping	cm^-3	1.0e15
PB (PHA, PHS, PHD)	Bulk junction contact potential	Volt	0.8
PHP	Bulk sidewall junction contact potential	Volt	PB

**Level 3 MOSFET Drain and Source Resistance Model Parameters**
Model Parameter	Description	Unit	Default
LRD	Drain resistance length sensitivity	Ohm/Meter	0.0
LRS	Source resistance length sensitivity	Ohm/Meter	0.0
PRD	Drain resistance area sensitivity	Ohm/Meter²	0.0
PRS	Source resistance area sensitivity	Ohm/Meter²	0.0
RD	Drain ohmic resistance	Ohm	0.0
RDC	Additional drain resistance due to contact resistance	Ohm	0.0
RS	Source ohmic resistance	Ohm	0.0
RSC	Additional source resistance due to contact resistance	Ohm	0.0
RSH (RL)	Drain and source diffusion sheet resistance	Ohm/Square	0.0
WRD	Drain resistance width sensitivity	Ohm/Meter	0.0
WRS	Source resistance width sensitivity	Ohm/Meter	0.0

**Level 3 MOSFET MOS Geometry Model Parameters**
Model Parameter	Description	Unit	Default
DEL	Channel length reduction	Meter	0.0
GEO	Layout geometry 0 = Drain and source not shared 1 = Drain shared 2 = Source shared 3 = Drain and source shared	None	0
HDIF	Length of heavily-doped diffusion region, from contact to lightly-doped region (ACM = 2 or 3)	Meter	0.0
LD (DLAT, LATD)	Lateral diffusion into channel from source and drain	Meter	If neither LD nor XJ specified: LD = 0.0 If XJ specified but LD not specified: LD = 0.75 ´ XJ
LDIF	Length of lightly-doped diffusion adjacent to gate (ACM = 1 or 2)	Meter	0.0
LDAC	Lateral diffusion for AC analysis	Meter	None
LMLT	Length shrink factor	None	1.0
LREF	Channel length reference	Meter	0.0
TOX	Oxide thickness	Meter	1.0e-7
WD	Lateral diffusion into channel from bulk along width	Meter	0.0
WDAC	Lateral diffusion for AC analysis	Meter	None
WMLT	Diffusion layer and width reduction factor	None	1.0
WREF	Channel width reference	Meter	0.0
XJ	Metallurgical junction depth	Meter	0.0
XL (DL, LDEL)	Length bias factor for mask and etch effects	Meter	0.0
XLREF	Channel length reference bias factor for mask and etch effects	Meter	0.0
XW (DW, WDEL)	Width bias factor for mask and etch effects	Meter	0.0
XWREF	Channel width reference bias factor for mask and etch effects	Meter	0.0

**Level 3 MOSFET Gate Overlap Capacitance Model Parameters**
Model Parameter	Description	Unit	Default
CGBO (CGB)	Gate-bulk overlap capacitance per meter channel length	Farad/Meter	0.0
CGDO (CGD, C2)	Gate-drain overlap capacitance per meter channel width	Farad/Meter	Calculated
CGSO (CGS, C1)	Gate-source overlap capacitance per meter channel width	Farad/Meter	Calculated
METO	Fringing field factor for gate-to-source and gate-to-drain overlap capacitance calculation	Meter	0.0

**Level 3 MOSFET Threshold Voltage Model Parameters**
Model Parameter	Description	Unit	Default
DELTA	Narrow width effect on threshold voltage	None	0.0
DELVTO	Threshold voltage shift at zero bias	Volt	0.0
ETA	Vds dependence of threshold voltage	None	0.0
GAMMA	Bulk threshold parameter	Volt^½	Calculated
N0	Gate subthreshold factor	None	0.0
ND	Drain subthreshold factor	Volt^-1	0.0
NFS	Fast surface state density	cm^-2	0.0
NGATE	Polysilicon gate doping	1/cm³	No default. If NGATE £ 0.0, it is set to 1.0e+18
NSS	Surface state density	cm^-2	0.0
PHI	Surface potential at strong inversion	Volt	Calculated
VTO (VT0)	Zero-bias threshold voltage	Volt	Calculated
WIC	Subthreshold model selector	Integer	0

**Level 3 MOSFET Mobility Model Parameters**
Model Parameter	Description	Unit	Default
THETA	Mobility modulation	None	0.0
UO	Surface mobility	cm²/Volt-Second	If KP is entered, UO is calculated from KP Else, NMOS = 600e-4 PMOS = 250e-4
VMAX (VMX)	Maximum carrier drift velocity	Meter/Second	0.0 (infinite)

**Level 3 MOSFET Noise Model Parameters**
Model Parameter	Description	Unit	Default
AF	Flicker noise exponent	None	1.0
GDSNOI	Channel thermal noise coefficient (for NLEV = 3)	None	1.0
KF	Flicker noise coefficient	None	0.0
NLEV	Noise equation selector	None	2

**Level 3 MOSFET Temperature Effect Model Parameters**
Model Parameter	Description	Unit	Default
BEX	Low field mobility (UO) temperature exponent	None	-1.5
CTA	Junction capacitance (CJ) temperature coefficient	°K^-1	0.0
CTP	Junction sidewall capacitance (CJSW) temperature coefficient	°K^-1	0.0
EG	Energy gap for pn junction diodes	electron-Volt	Calculated
GAP1	1st bandgap correction factor	electron-Volt/°K	7.02e-4
GAP2	2nd bandgap correction factor	°K	1108
PTA	Junction potential (PB) temperature coefficient (TLEVC = 1 or 2)	Volt/°K	0.0
PTC	Fermi potential (PHI) temperature coefficient (TLEVC = 1 or 2)	Volt/°K	0.0
PTP	Junction potential (PHP) temperature coefficient (TLEVC = 1 or 2)	Volt/°K	0.0
TCV	Threshold voltage (VTH) temperature coefficient	Volt/°K	0.0
TLEV	Temperature equation selector 0 = SPICE-style 1 = ASPEC style	None	0
TLEVC	Temperature equation selector for junction capacitances and potentials 0 = SPICE-style 1 = ASPEC style	None	0
TRD	Temperature coefficient for drain resistor (RD)	°K^-1	0.0
TRS	Temperature coefficient for source resistor (RS)	°K^-1	0.0
XTI	Saturation current temperature exponent	None	0.0

SPICE 2G Empirical MOSFET Model Netlist Example

.MODEL nmos3 NMOS LEVEL=3

+ CGBO=4.0E-10 CGDO=3.0E-10 CGSO=3.0E-10 CJ=5.6E-4 CJSW=5.0E-11

+ DELTA=0.7 ETA=3.7E-2 GAMMA=0.6 KAPPA=2.9E-2 KP=2.0E-4

+ LD=5.0E-8 MJ=0.56 MJSW=0.52 NFS=6.0E+11 NSUB=1.4E+17

+ PB=1.0 PHI=0.7 RSH=2.0 THETA=0.27 TOX=1.0E-8 TPG=1.0

+ UO=550 XJ=0.2E-6 VMAX=2.0E+5 VTO=0.65

HFSS视频教程 ADS视频教程 CST视频教程 Ansoft Designer 中文教程


Copyright © 2006 - 2013 微波EDA网, All Rights Reserved 业务联系：mweda@163.com