Model Parameter

Description

Unit

Default

LEVEL

1 selects the Schichman-Hodges MOSFET model

None

1 (default if LEVEL parameter is omitted)

COX (CO)

Oxide capacitance per unit of gate area

Farad/Meter²

Calculated

GEO

Layout geometry

0 = Drain and source not shared
1 = Drain shared
2 = Source shared
3 = Drain and source shared

None

0

KP (BETA, BET)

Intrinsic transconductance parameter.

Amp/Volt²

Calculated

LAMBDA (LAM, LA)

Channel length modulation

Volt^-1

0.0

NI

Intrinsic concentration

cm^-3

Calculated

SCALM

Model parameter scale factor (also an option for .OPTIONs statement)

None

1.0

TNOM

Nominal device temperature

°C

25

TOX

Gate oxide thickness

Meter

1.0e-7

UO

Carrier mobility

cm²/Volt-Second

Calculated

UPDATE

Update selector for parasitics model

None

0.0

Model Parameter

Description

Unit

Default

ACM

Area calculation method selector

0 = SPICE model, parameters depend on element areas

1 = ASPEC model, parameters depend on element width

2 = HSPICE model (combines ACM 0 and 1, extensions for lightly-doped drain technology

3 = HSPICE method, ACM 2 plus shared sources and drains and gate-edge source/drain peripheral capacitances

None

0

ASPEC

IS option switch

None

0.0

JS

Bulk junction saturation current

ACM = 1:
Amp/Meter

Else:
Amp/Meter²

0.0

JSW

Sidewall bulk junction saturation current

Amp/Meter

0.0

IS

Bulk junction saturation current

Amp

1.0e-14

N

Emission coefficient

None

1.0

NDS

Reverse bias slope coefficient

None

1.0

VNDS

Reverse diode current transition point

Volt

-1.0

Model Parameter

Description

Unit

Default

CBD

Zero-bias bulk-drain junction capacitance

Farad

0.0

CBS

Zero-bias bulk-source junction capacitance

Farad

0.0

CJ (CDB, CSB, CJA)

Zero-bias junction capacitance

ACM = 1:
Farad/Meter

Else:
Farad/Meter²

Calculated

CJSW (CJP)

Zero-bias gate-edge sidewall bulk junction capacitance

Farad/Meter

0.0

CJGATE

Zero-bias gate-edge sidewall bulk junction capacitance (ACM = 3)

Farad/Meter

CJSW

FC

Forward-bias capacitance depletion coefficient

None

0.0

MJ (EXA, EXJ, EXS, EXD)

Bulk junction grading coefficient

None

0.5

MJSW (EXP)

Bulk sidewall junction grading coefficient

None

0.33

PB (PHA, PHS, PHD)

Bulk junction contact potential

Volt

0.8

PHP

Bulk sidewall junction contact potential

Volt

PB

TT

Transit time

Second

0.0

Model Parameter

Description

Unit

Default

LRD

Drain resistance length sensitivity

Ohm/Meter

0.0

LRS

Source resistance length sensitivity

Ohm/Meter

0.0

PRD

Drain resistance area sensitivity

Ohm/Meter²

0.0

PRS

Source resistance area sensitivity

Ohm/Meter²

0.0

RD

Drain ohmic resistance

Ohm

0.0

RDC

Additional drain resistance due to contact resistance

Ohm

0.0

RS

Source ohmic resistance

Ohm

0.0

RSC

Additional source resistance due to contact resistance

Ohm

0.0

RSH (RL)

Drain and source diffusion sheet resistance

Ohm/Square

0.0

WRD

Drain resistance width sensitivity

Ohm/Meter

0.0

WRS

Source resistance width sensitivity

Ohm/Meter

0.0

Model Parameter

Description

Unit

Default

DEL

Channel length reduction

Meter

0.0

HDIF

Length of heavily-doped diffusion region, from contact to lightly-doped region (ACM = 2 or 3)

Meter

0.0

LD (DLAT, LATD)

Lateral diffusion into channel from source and drain

Meter

If neither LD nor XJ are specified:
LD = 0.0

If XJ specified but LD not specified:
LD = 0.75 ´ XJ

LDIF

Length of lightly-doped diffusion adjacent to gate (ACM = 1 or 2)

Meter

0.0

LDAC

Lateral diffusion for AC analysis

Meter

None

LMLT

Length shrink factor

None

1.0

LREF

Channel length reference

Meter

0.0

WD

Lateral diffusion into channel from bulk along width

Meter

0.0

WDAC

Lateral diffusion for AC analysis

Meter

None

WMLT

Diffusion layer and width reduction factor

None

1.0

WREF

Channel width reference

Meter

0.0

XJ

Metallurgical junction depth

Meter

0.0

XL (DL, LDEL)

Correction for mask and etch effects

Meter

0.0

XW (DW, WDEL)

Correction for mask and etch effects

Meter

0.0

Model Parameter

Description

Unit

Default

DELVTO

Threshold voltage shift at zero bias

Volt

0.0

GAMMA

Body effect factor

Volt^½

Calculated

NFS (DFS, NF, DNF)

Fast surface state density

cm^-2 ´ Volt^-1

0.0

NGATE

Polysilicon gate doping

1/cm³

No default.

If NGATE £ 0.0, it is set to 1.0e+18

NSS

Surface state density

cm^-2

0.0

NSUB (DNB, NB)

Substrate doping

1/cm³

1.0e+15

PHI

Surface inversion potential

Volt

Calculated

TPG (TPS)

Type of gate material
0 = Aluminum gate
1 = Polysilicon gate same as source-drain diffusion

-1 = Polysilicon gate opposite to source-drain diffusion

None

1

VTO (VT0)

Zero-bias threshold voltage

Volt

Calculated

Model Parameter

Description

Unit

Default

CGBO (CGB)

Gate-bulk overlap capacitance per meter channel length.

If CGBO not specified but WD and TOX are specified, CGBO is calculated from TOX and WD.

Farad/Meter

0.0

CGDO (CGD, C2)

Gate-drain overlap capacitance per meter channel length

Farad/Meter

Calculated

CGSO (CGS, C1)

Gate-source overlap capacitance per meter channel length

Farad/Meter

Calculated

METO

Fringing field factor for gate-to-source and gate-to-drain overlap capacitance calculation

Meter

0.0

Model Parameter

Description

Unit

Default

AF

Flicker noise exponent

None

1.0

GDSNOI

Channel thermal noise coefficient (for NLEV = 3)

None

1.0

KF

Flicker noise coefficient

None

0.0

NLEV

Noise equation selector

None

2

Model Parameter

Description

Unit

Default

BEX

Low field mobility (UO) temperature exponent

None

-1.5

CTA

Junction capacitance (CJ) temperature coefficient

°K^-1

0.0

CTP

Junction sidewall capacitance (CJSW) temperature coefficient

°K^-1

0.0

EG

Energy gap for pn junction diodes

electron-Volt

Calculated

F1EX

Bulk junction bottom grading coefficient (Not used in current implementation)

None

0.0

GAP1

1st bandgap correction factor

electron-Volt/°K

7.02e-4

GAP2

2nd bandgap correction factor

°K

1108

LAMEX

LAMBDA temperature coefficient

°K^-1

0.0

PTA

Junction potential (PB) temperature coefficient (TLEVC = 1 or 2)

Volt/°K

0.0

PTC

Fermi potential (PHI) temperature coefficient (TLEVC = 1 or 2)

Volt/°K

0.0

PTP

Junction potential (PHP) temperature coefficient (TLEVC = 1 or 2)

Volt/°K

0.0

TCV

Threshold voltage (VTH) temperature coefficient

Volt/°K

0.0

TLEV

Temperature equation selector

0 = SPICE-style
1 = ASPEC style

None

0.0

TLEVC

Temperature equation selector for junction capacitances and potentials

0 = SPICE-style
1 = ASPEC style

None

0.0

TRD

Temperature coefficient for drain resistor (RD)

°K^-1

0.0

TRS

Temperature coefficient for source resistor (RS)

°K^-1

0.0

XTI

Saturation current temperature exponent

None

0.0

Model Parameter

Description

Unit

Default

CGBEX

cgb exponent (CAPOP = 1 only)

None

0.5

CF1

Modified Meyer control for transition of cgs from depletion to weak inversion for CGSO (CAPOP = 2 only)

Volt

0.0

CF2

Modified Meyer control for transition of cgs from weak to strong inversion region (CAPOP = 2 only)

Volt

0.1

CF3

Modified Meyer control for transition of cgs and cgd from saturation to linear region as a function of vds (CAPOP = 2 only)

None

1.0

CF4

Modified Meyer control for contour of cgb and cgs smoothing factors

None

50.0

CF5

Modified Meyer control for capacitance multiplier for cgs in saturation region

None

0.667

CF6

Modified Meyer control for contour of cgd smoothing factor

None

500.0

XQC

Selector for gate capacitance drain versus source charge sharing coefficient

0 = 0/100
0.4 = 40/60
0.5 = 50/50
³ 1 = 0/100
Any other value < 1 = 40/60

None

0.5