Model Parameter

Description

Unit

Default

LEVEL

7 is required to select the Triquint TOM3 MESFET model

None

1 (default if LEVEL parameter is omitted)

ACM

0 = SPICE method

1 = physical basis (required for Triquint TOM features)

None

0

AF

Flicker noise exponent

None

1.0

ALIGN

Correction for gate misalignment

Meter

0.0

ALPHA (ALPHA1, ALFA)

Saturation factor

Volt^-1

2.0

ALPHATCE

ALPHA temperature coefficient (exponential)

°K^-1

0.0

AREA

Area factor

None

1.0

BETA

Transconductance (gain) parameter

Amp/Volt^-Q

0.1

BETATCE (ABET)

Linear temperature coefficient for BETA

°K^-1

0.0

CAPDS (CDS)

Drain-source capacitance

Farad

1.0e-12

CAPOP

Capacitor model selector

None

0

CDSC

Dispersion model capacitance

Farad

1.0e-18

CGD

Zero-bias gate-drain junction capacitance

Farad

0.0

CGDTCE

Linear temperature coefficient for CGD

°K^-1

0.0

CGS

Zero-bias gate-source junction capacitance

Farad

0.0

CGSTCE

Linear temperature coefficient for CGS

°K^-1

0.0

DCAP

Capacitance equation selector

None

2

DGAM

Dispersion model feedback coefficient

None

0.0

DELTA

Ids feedback parameter.

None

0.0

EG

Barrier height at 0 °K.

Volt

1.11

FC

Coefficient for PB in forward-bias capacitance calculations

None

0.5

GAMMA (GAMDS, GAMA)

Lowering coefficient for drain voltage-induced threshold voltage

None

0.0

GAMMATC(AGAM)

Linear temperature coefficient for GAMMA

°K^-1

0.0

GDSNOI

Channel noise coefficient (NLEV = 3)

None

1.0

HDIF

Distance of heavily-doped (low resistance) region from source or drain contact to lightly-doped region

Meter

0.0

ILK

Leakage diode current parameter

Amp

0.0

IS

Forward gate diode saturation current.

Amp

1.0e-14

K (KAPP)

Knee-function parameter

None

2

KF (KF4)

Flicker noise coefficient

None

0.0

K1

Threshold voltage sensitivity to bulk node

Volt^½

0.0

L

FET gate length

Meter

0.0

LAMBDA (LAMB)

Channel length modulation factor

Volt^-1

0.0

LAM1

Channel length modulation gate voltage parameter

Volt^-1

0.0

LDEL

Difference between drawn length and actual or optical device length

Meter

0.0

LDIF

Distance of lightly-doped region from heavily-doped region to transistor edge

Meter

0.0

MJ

Grading coefficient for gate-drain and gate-source diodes
(CAPOP = 0 or 2)

Step junction: 0.50
Linear graded junction: 0.33

None

0.50

MST

Subthreshold slope-drain parameter

Volt^-1

0.0

MSTTC (AMST)

Linear temperature coefficient for MST

Volt^-1°K^-1

0.0

N

Forward gate diode ideality factor

None

1.0

ND

Drain subthreshold factor

Volt^-1

0.0

NG

Gate subthreshold factor

Volt^-1

0.0

NLEV

Noise equation selector

None

2

PB

Gate junction potential

Volt

0.8

PLK

Leakage diode potential parameter

Volt

1.0

QGAD

Charge parameter

Volt^-1

1.0

QGAG

Charge parameter

Volt^-1

1.0

QGCL

Charge parameter

Farad

2.0e-16

QGDH

Sidewall capacitance

Farad

0.0

QGG0

Charge parameter

Farad

0.0

QGGB

Charge parameter

Amp^-1Volt^-1

100

QGI0

Charge parameter

Amp

1.0e-6

QGQH

Charge parameter

Farad-Volt

-2.0e-16

QGQL

Charge parameter

Farad-Volt

5.0e-16

QGSH

Sidewall capacitance

Farad

1.0e-16

RD

Drain ohmic resistance

Ohm

0.0

RG (RG2)

Gate ohmic resistance

Ohm

0.0

RS

Source ohmic resistance

Ohm

0.0

RSH

Sheet resistance of heavily-doped region

Ohm/square

0.0

RSHG

Gate sheet resistance

Ohm/square

0.0

TNOM (TREF)

Nominal temperature

°C

25.00

TT

Transit time

Second

0.0

TUGD

Dispersion model time constant

Second

1.0e-9

VBI

Gate diode built-in voltage

Volt

1.0

VBITC

Linear temperature coefficient of VBI

Volt/°K

0.0

VGEXP (Q)

Gate voltage exponent

None

2.0

VST

Subthreshold slope

Volt

1.0

VTO (VT0, VPO)

Threshold voltage.

Negative VTO denotes a depletion transistor (for both NJF and PJF), while positive VTO denotes an enhancement transistor.

Volt

-2.0

VTOTC (TCV, AVT0)

Temperature compensation coefficient for threshold voltage VTO

°K^-1

0.0

VSTTC (AVST)

Linear temperature coefficient for VST

Volt

0.0

W

FET gate width

Meter

0.0

WDEL

Difference between drawn width and actual or optical device width

Meter

0.0

XTI

Diode saturation current temperature exponent

None

3.0