Model Parameter
|
Description
|
Unit
|
Default
|
AF
|
Flicker noise exponent
|
None
|
1.0
|
ALPHA
|
Saturation factor
|
None
|
2.0
|
B
|
Ids-Igs characteristics factor
|
None
|
0.0
|
BETA
|
Transconductance coefficient
|
None
|
1.0e-4
|
BETATCE
|
Beta temperature coefficient for
Triquint model
|
None
|
0.0
|
CDS
|
Drain-source capacitance
|
Farad
|
0.0
|
CGD
|
Gate-drain capacitance
|
Farad
|
0.0
|
CGS
|
Gate-source capacitance
|
Farad
|
0.0
|
DELTA1
|
Capacitance saturation transition
voltage
|
Volt
|
0.3
|
DELTA2
|
Capacitance saturation transition
voltage
|
Volt
|
0.2
|
EG
|
Energy gap for gate-drain and gate-source
diodes at 0°K
|
Volt
|
1.11
|
FC
|
Coefficient for forward-bias depletion
capacitance formulas
|
None
|
0.5
|
IS
|
Leakage saturation current
|
Ampere
|
1.0e-14
|
KF
|
Flicker noise coefficient. Reasonable
values are from 1e-19 to 1e-25.
|
None
|
0.0
|
LAMBDA
|
Channel length modulation factor
|
None
|
0.0
|
N
|
Gate diode emission coefficient
|
None
|
1.0
|
RD
|
Drain ohmic resistance
|
Ohm
|
0.0
|
RG
|
Gate ohmic resistance
|
Ohm
|
0.0
|
RS
|
Source ohmic reisitance
|
Ohm
|
0.0
|
VTOTC
|
Temperature compensation coefficient
for VTO
|
None
|
0.0
|
TNOM
|
Nominal circuit temperature
|
°C
|
25.0
|
TQM
|
Junction capacitance temperature
coefficient
|
None
|
0.2
|
VBI
|
Built-in gate diode voltage
|
Volt
|
0.85
|
VMAX
|
Maximum junction voltage before
capacitance limiting
|
Volt
|
0.5
|
VTO
|
Threshold voltage
|
Volt
|
-2.0
|
XTI
|
Saturation current temperature
exponent
|
None
|
3.0
|
IDSMOD
|
IDS Model
|
None
|
3.0
|
TAU
|
Transit time under the gate
|
Second
|
0.0
|
IDSTC
|
IDS temperature coefficient
|
None
|
0.0
|
RIN
|
Channel resistance
|
Ohm
|
0.0
|
GSCAP
|
Gate-source capacitance model selector:
0=None, 1=Linear, 2=Junction, 3=Statz Charge, 5= Statz Capacitance
|
None
|
1
|
RGD
|
Gate-drain resistance
|
Ohm
|
0.0
|
GDCAP
|
Gate-drain capacitance model selector:
0=None, 1=Linear, 2=Junction, 3=Statz Charge, 5= Statz Capacitance
|
None
|
1
|
LG
|
Gate inductance
|
Henry
|
0.0
|
LD
|
Drain inductance
|
Henry
|
0.0
|
LS
|
Source inductance
|
Henry
|
0.0
|
CRF
|
With RC, frequency-dependent output
capacitance
|
Farad
|
0.0
|
GSFWD
|
Forward Igs model selector: 0=None,
1=Linear, 2=Diode
|
None
|
1
|
GSREV
|
Reverse Igs model selector: 0=None,
1=Linear, 2=Diode
|
None
|
0
|
GDFWD
|
Forward Igd model selector: 0=None,
1=Linear, 2=Diode
|
None
|
0
|
GDREV
|
Reverse Igd model selector: 0=None,
1=Linear, 2=Diode
|
None
|
1
|
VBR
|
Gate-drain junction reverse bias
breakdown voltage
|
Volt
|
1.0e100
|
VJR
|
Breakdown junction potential
|
Volt
|
0.025
|
IR
|
Gate reverse saturation current
|
Ampere
|
1.0e-14
|
IMAX
|
Explosion current
|
Ampere
|
1.6
|
IMELT
|
Diode limiting current
|
Ampere
|
1.6
|
FNC
|
Flicker noise corner frequency
|
Hertz
|
0.0
|
R
|
Gate noise coefficient
|
None
|
0.5
|
P
|
Drain noise coefficient
|
None
|
1.0
|
C
|
Gate-drain noise correlation coefficient
|
None
|
0.9
|
FFE
|
Flicker noise exponent
|
None
|
1.0
|
RC
|
Frequency-dependent resistance
|
Ohm
|
0.0
|