Model Parameter

Description

Unit

Default

LEVEL

9 is required to select the Curtice3 GaAsFET model

None

1 (default if LEVEL parameter is omitted)

BETATCE

Beta temperature coefficient for TriQuint model

0.0

CDS

Drain to source capacitance

Farad

0.0

CGD

Zero-bias gate-drain junction capacitance

Farad

0.0

CGS

Zero-bias gate-source junction capacitance

Farad

0.0

EG

Energy gap for gate-to-drain and gate-to-source diodes at 0.0K

e-V

1.11

FC

Coefficient for forward-bias depletion capacitance formulas‘

0.5

IS

Leakage saturation current

Ampere

1.0e-14

N

Gate diode emission coefficient

None

1.0

RD

Drain ohmic resistance

Ohm

0.0

RG

Gate ohmic resistance

Ohm

0.0

RS

Source ohmic resistance

Ohm

0.0

VTOTC

Temperature compensation coefficient for VTO

0.0

TNOM

Nominal circuit temperature

°C

25.0

VBI

Built-in gate diode voltage

Volt

0.85

VTO

Threshold voltage

Volt

Not used if not defined

XTI

Saturation current temperature coefficient

3.0

IDSMOD

IDS model selector

None

2.0

TAU

Transit time under the gate

Second

0.0

IDSTC

Ids temperature coefficient

0.0

RF

Gate-source effective forward-bias resistance

Ohm

0.0

GSCAP

Gate-source capacitance model selector 0=None, 1=Linear, 2=Junction, 3=Stazt charge, 5=Statz cap

None

1

RGD

Gate-drain resistance

Ohm

0.0

GDCAP

Gate-drain capacitance model selector 0=None, 1=Linear, 2=Junction, 3=Stazt charge, 5=Statz cap

None

1

LG

Gate inductance

Henry

0.0

LD

Drain inductance

Henry

0.0

LS

Source inductance

Henry

0.0

CRF

With RDS, models frequency-dependent output conductance

0.0

GSFWD

0=None, 1=Linear, 2=Diode

1.0

GSREV

0=None, 1=Linear, 2=Diode

1.0

GDFWD

0=None, 1=Linear, 2=Diode

1.0

GDREV

0=None, 1=Linear, 2=Diode

1.0

R1

Approximate breakdown resistance

Ohm

0.0

R2

Resistance relating breakdown voltage to channel current

Ohm

0.0

VBR

Gate-drain junction reverse bias breakdown voltage (gate-source junction reverse bias breakdown voltage with Vds<0)

Volt

1e100

VJR

Breakdown junction potential

Volt

0.025

IR

Gate reverse saturation current

Ampere

1.0e-14

IMAX

Explosion current

Ampere

1.0

IMELT

Ampere

1.0

FNC

Flicker noise corner frequency

Hz

0.0

R

Gate noise coefficient

0.5

P

Drain noise coefficient

1.0

C

Gate-drain noise correlation coefficient

None

0.9

BETA2

Coefficient for pinch-off change with respect to Vds

1.0e-4

RDS0

DC conductance at Vgs=0

0.0

VOUT0

Output voltage at which A0, A1, A2, and A3 were evaluated

Volt

0.0

VDSDC

Vds at RDSO measured bias

Volt

0.0

GAMMA

Current saturation

2.0

A0

Cubic polynomial Ids equation coefficient 1

0.0

A1

Cubic polynomial Ids equation coefficient 2

0.0

A2

Cubic polynomial Ids equation coefficient 3

0.0

A3

Cubic polynomial Ids equation coefficient 4

0.0

RIN

Channel resistance

Ohm

0.0

A5

Time delay proportionality constant for Vds

0.0

KF

Flicker noise coefficient

0.0

AF

Flicker noise exponent

1.0

FFE

Flicker noise exponent

1.0

RDS

Additional output resistance for RF operation

Ohm

0.0