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Ansoft Designer / Ansys Designer 在线帮助文档：

Nexxim Simulator >
Nexxim Component Models >
FETs (JFETs and MESFETs) >
   GaAsFET Instance, Curtice3 Model (Level 9)       

GaAsFET Instance, Curtice3 Model (Level 9)

 

Curtice3 GaAsFET Instance Netlist Syntax

The syntax for a Level 9 Curtice3 model GaAsFET instance is:

Jxxxx nd ng ns [nb] modelname

[AREA=val] [M=val] [TEMP=val] [DTEMP=val]

nd is the drain node, ng is the gate node, ns is the source node and nb is the base or substrate node of the transistor. The modelname is the name of a Level 8 MESFET model defined in a .MODEL statement elsewhere in the netlist.

 


Level 9 Curtice3 GaAsFET Instance Parameters

Model Parameter

Description

Unit

Default

AREA

Area multiplier

None

1.0

M

Multiplier for parallel devices

None

1.0

TEMP

Device temperature

°C

None

DTEMP

Difference between device temperature and circuit temperature

°C

None

Curtice3 GaAsFET Instance Netlist Examples

J2 12 VCC 0 gaasfet9



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