Model Parameter
|
Description
|
Unit
|
Default
|
LEVEL
|
22 is required to select the Curtice2
Advanced GaAsFET model
|
None
|
1 (default if LEVEL parameter is
omitted)
|
ALPHA
|
Saturation factor
|
None
|
2.0
|
BETA
|
Transconductance coefficient
|
None
|
1.0e-4
|
BETATCE
|
Beta temperature coefficient for
Triquint models
|
None
|
0.0
|
CDS
|
Drain to source capacitance
|
Farad
|
0.0
|
CGD
|
Zero-bias gate-drain junction capacitance
|
Farad
|
0.0
|
CGS
|
Zero-bias gate-source junction
capacitance
|
Farad
|
0.0
|
EG
|
Energy gap for gate-to-drain and
gate-to-source diode at 0.0 K
|
|
1.11
|
FC
|
Coefficient for forward-bias depletion
capacitance formulas
|
|
0.5
|
GAMDS
|
Drain voltage induced threshold
voltage lowering coefficient
|
|
-0.01
|
IS
|
Leakage saturation current
|
Amp
|
1.0e-14
|
KF
|
Flicker noise coefficient
|
None
|
0.0
|
LAMBDA
|
Channel length modulation
|
|
0.0
|
N
|
Gate diode emission coefficient
|
None
|
1.0
|
RD
|
Drain ohmic resistance
|
Ohm
|
0.0
|
RG
|
Gate ohmic resistance
|
Ohm
|
0.0
|
RS
|
Source ohmic resistance
|
Ohm
|
0.0
|
VTOTC
|
Temperature compensation coefficient
for VTO
|
|
0.0
|
TNOM
|
Nominal temperature
|
°C
|
25
|
UCRIT
|
Critical field for mobility degradation
|
|
0.0
|
VBI
|
Gate diode built-in voltage
|
Volt
|
0.85
|
VGEXP
|
Gate voltage exponent
|
|
2.0
|
VTO
|
Threshold voltage
|
Volt
|
-2.0
|
XTI
|
Saturation current temperature
exponent
|
|
3.0
|
IDSMOD
|
IDS model
|
None
|
2.0
|
TAU
|
Transit time under the gate
|
Second
|
0.0
|
IDSTC
|
Ids temperature coefficient
|
|
0.0
|
RF
|
Gate-source effective forward-bias
resistance
|
Ohm
|
0.0
|
GSCAP
|
Gate-source capacitance model
0 = None
1 = Linear
2 = Junction
3 = Statz charge
5 = Statz capacitance
|
None
|
1
|
RGD
|
Gate-drain resistance
|
Ohm
|
0.0
|
GDCAP
|
Gate-drain capacitance model
0 = None
1 = Linear
2 = Junction
3 = Statz charge
5 = Statz capacitance
|
None
|
1
|
LD
|
Drain inductance
|
Henry
|
0.0
|
LG
|
Gate inductance
|
Henry
|
0.0
|
LS
|
Source inductance
|
Henry
|
0.0
|
CRF
|
With RDS, frequency-dependent output
conductance
|
Siemens
|
0.0
|
GSFWD
|
|
None
|
1.0
|
GSREV
|
|
None
|
2.0
|
GDFWD
|
|
None
|
1.0
|
GDREV
|
|
None
|
2.0
|
R1
|
Approximate breakdown resistance
|
Ohm
|
0.0
|
R2
|
Resistance relating breakdown voltage
to channel current
|
Ohm
|
0.0
|
VBR
|
Gate-drain junction reverse-bias
breakdown voltage (gate-source junction reverse-bias breakdown voltage
with Vds<0)
|
Volt
|
1.0e100
|
VJR
|
Breakdown junction potential
|
Volt
|
0.025
|
IR
|
Gate reverse saturation current
|
Ampere
|
1.0e-14
|
IMAX
|
Explosion current
|
Ampere
|
1.0
|
IMELT
|
|
Ampere
|
1.0
|
FNC
|
Flicker noise corner frequency
|
Hertz
|
0.0
|
R
|
Gate noise coefficient
|
|
0.5
|
P
|
Gate noise coefficient
|
|
1.0
|
C
|
Gate noise coefficient
|
|
0.9
|
RC
|
Used with CRF to model frequency
dependence output
|
|
0.0
|
RGS
|
Gate-source resistance
|
Ohm
|
0.0
|