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Nexxim Simulator >
Nexxim Component Models >
FETs (JFETs and MESFETs) >
GaAsFET Instance, Curtice2 Advanced Model (Level 22)

GaAsFET Instance, Curtice2 Advanced Model (Level 22)

Curtice2 Advanced GaAsFET Instance Netlist Syntax

The syntax for a Level 22 Curtice2 Advanced Gallium Arsenide Field-Effect Transistor instance is:

Jxxxx nd ng ns modelname [AREA=val] [TEMP=val] [DTEMP=val] [M=val]

nd is the drain node, ng is the gate node, and ns is the source node of the transistor. The modelname is the name of a Level 22 GaAsFET model defined in a .MODEL statement.

**Level 22 GaAsFET Instance Parameters**
Parameter	Description	Unit	Default
AREA	Area multiplier	None‘	1.0
M	Multiplier for multiple parallel devices	None	1.0
TEMP	Device temperature	°C	Circuit temperature
DTEMP	Temperature difference between device and circuit	°C	0.0

Curtice2 Advanced GaAsFET Instance Netlist Example

J15 12 VCC 0 gaasfet22 area=1.1

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