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Ansoft Designer / Ansys Designer 在线帮助文档：

Nexxim Simulator >
Nexxim Component Models >
FETs (JFETs and MESFETs) >
   MESFET Instance, EEHEMT Model (Level 15)       

MESFET Instance, EEHEMT Model (Level 15)

 

EEHEMT Instance Netlist Syntax

The syntax for a Level 15 High-Energy Mobility Transistor (EEHEMT) instance is:

Jxxxx nd ng ns [nb] modelname

[UGW=val] [M=val] [N=val]

nd is the drain node, ng is the gate node, and ns is the source node of the transistor. The modelname is the name of a Level 15 EEHEMT model defined in a .MODEL statement elsewhere in the netlist.

 


Level 2 JFET Model Parameters

Model Parameter

Description

Unit

Default

UGW

Instance gate width

Meter

10e-6

N

Number of instances (gate fingers)

None

1.0

M

Number of parallel transistor instances

None

1.0

 

Note 

The instance parameter UGW overrides the model parameter UGW in setting the gate width.

The instance parameter N sets the number of instances, and does not override the model parameter N (gate diode emission coefficient).

EEHEMT Instance Netlist Examples

J15 12 VCC 0 eehemt15



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