Level 9 VBIC99 BJT Model
Basic Parameters
Model Parameter
|
Description
|
Unit
|
Default
|
LEVEL
|
9 is required to select the Level
9 BJT model
|
None
|
1 (default if LEVEL parameter is
omitted)
|
ART
|
Smoothing parameter for reach-through
|
None
|
0.1
|
AVC1
|
Base-collector avalanche parameter
1
|
Volt-1
|
0.0
|
AVC2
|
Base-collector avalanche parameter
2
|
Volt-1
|
0.0
|
DEAR
|
Delta activation energy for ISRR
|
electron-Volt
|
0.0
|
EA
|
Activation energy for IS
|
electron-Volt
|
1.12
|
EAIC
|
Activation energy for IBCI/IBEIP
|
electron-Volt
|
1.12
|
EAIE
|
Activation energy for IBEI
|
electron-Volt
|
1.12
|
EAIS
|
Activation energy for IBCIP
|
electron-Volt
|
1.12
|
EANC
|
Activation energy for IBCN/IBENP
|
electron-Volt
|
1.12
|
EANE
|
Activation energy for IBEN
|
electron-Volt
|
1.12
|
EANS
|
Activation energy for IBCNP
|
electron-Volt
|
1.12
|
EAP
|
Activation energy for ISP
|
electron-Volt
|
1.12
|
EBBE
|
exp(-VBBE / (NBBE ´ Vtv))
|
None
|
0.0
|
GAMM
|
Epitaxial doping factor
|
None
|
0.0
|
HRCF
|
High current RC factor
|
None
|
0.0
|
IBBE
|
Base-emitter breakdown current
|
Amp
|
1.0e-6
|
IBCI
|
Ideal base-collector saturation
current
|
Amp
|
1.0e-16
|
IBCIP
|
Ideal parasitic base-collector
saturation current
|
Amp
|
0.0
|
IBCN
|
Non-ideal base-collector saturation
current
|
Amp
|
0.0
|
IBCNP
|
Non-ideal parasitic base-collector
saturation current
|
Amp
|
0.0
|
IBEI
|
Ideal base-emitter saturation current
|
Amp
|
1.0e-18
|
IBEIP
|
Ideal parasitic base-emitter saturation
current
|
Amp
|
0.0
|
IBEN
|
Non-ideal base-emitter saturation
current
|
Amp
|
0.0
|
IBENP
|
Non-ideal parasitic base-emitter
saturation current
|
Amp
|
0.0
|
IKF
|
Forward knee current. Zero represents
infinite current.
|
Amp
|
0.0
|
IKP
|
Parasitic knee current. Zero represents
infinite current.
|
Amp
|
0.0
|
IKR
|
Reverse knee current. Zero represents
infinite current.
|
Amp
|
0.0
|
IS
|
Transport saturation current
|
Amp
|
1.0e-16
|
ISP
|
Parasitic transport saturation
current
|
Amp
|
0.0
|
ISRR
|
Reverse transport saturation current
|
Amp
|
1.0
|
ITF
|
Coefficient of TF dependence on
Ic
|
Amp
|
0.0
|
LAMBDA
|
|
|
0.0
|
MC
|
Base-collector grading coefficient
|
None
|
0.33
|
ME
|
Base-emitter grading coefficient
|
None
|
0.33
|
MS
|
Substrate-collector grading coefficient
|
None
|
0.33
|
NBBE
|
Base-emitter breakdown emission
coefficient
|
None
|
1.0
|
NCI
|
Ideal base-collector emission coefficient
|
None
|
1.0
|
NCIP
|
Ideal parasitic base-collector
emission coefficient
|
None
|
1.0
|
NCN
|
Non-ideal base-collector emission
coefficient
|
None
|
2.0
|
NCNP
|
Non-ideal parasitic base-collector
emission coefficient
|
None
|
2.0
|
NEI
|
Ideal base-emitter emission coefficient
|
None
|
1.0
|
NEN
|
Non-ideal base-emitter emission
coefficient
|
None
|
2.0
|
NF
|
Forward emission coefficient
|
None
|
1.0
|
NFP
|
Parasitic forward emission coefficient
|
None
|
1.0
|
NKF
|
High-current Beta rolloff parameter
|
None
|
0.5
|
NR
|
Reverse emission coefficient
|
None
|
1.0
|
PC
|
Built-in base-collector potential
|
Volt
|
0.75
|
PE
|
Built-in base-emitter potential
|
Volt
|
0.75
|
PS
|
Built-in substrate-collector potential
|
Volt
|
0.75
|
QBM
|
Base charge model selection
|
None
|
0.0
|
QTF
|
Variant of TF with base-width modulation
|
Second
|
0.0
|
RBI
|
Intrinsic base resistance
|
Ohm
|
1.0e-5
|
RBP
|
Parasitic base resistance
|
Ohm
|
1.0e-5
|
RBX
|
Extrinsic base resistance
|
Ohm
|
1.0e-5
|
RCI
|
Intrinsic collector resistance
|
Ohm
|
1.0e-5
|
RCX
|
Extrinsic collector resistance
|
Ohm
|
1.0e-5
|
RE
|
Emitter resistance
|
Ohm
|
1.0e-5
|
RS
|
Substrate resistance
|
Ohm
|
1.0e-5
|
TF
|
Forward transit time
|
Second
|
1.0e-11
|
TNBBE
|
Temperature coefficient of NBBE
|
None
|
0.0
|
TR
|
Reverse transit time
|
Second
|
1.0e-11
|
TREF (TNOM)
|
Nominal circuit temperature
|
°C
|
25
|
TVBBE1
|
Linear temperature coefficient
of VBBE
|
None
|
0.0
|
TVBBE2
|
Quadratic temperature coefficient
of VBBE
|
None
|
0.0
|
VBBE
|
Base-emitter breakdown voltage
|
Volt
|
0.0
|
VEF
|
Forward early voltage. Zero represents
infinite voltage
|
Volt
|
0.0
|
VER
|
Reverse early voltage. Zero represents
infinite voltage
|
Volt
|
0.0
|
VO (V0)
|
Epitaxial drift saturation voltage
|
Volt
|
0.0
|
VRT
|
Reach-through voltage for Cbc limiting
|
Volt
|
0.0
|
VTF
|
Coefficient of TF dependence on
Vbc
|
Volt
|
0.0
|
WBE
|
Portion of IBEI derived from Vbei,
(1-WBE) derived from Vbex
|
None
|
1.0
|
WSP
|
Portion of ICCP derived from Vbep,
(1-WBE) derived from Vbci
|
None
|
1.0
|
XTF
|
Coefficient of TF bias dependence
|
None
|
0.0
|
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