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Level 8 HiCUM BJT Model

Netlist Form for Level 8 BJT Model

The .MODEL statement for the level 8 HiCUM BJT specifies values for one or more model parameters.

.MODEL modelname NPN LEVEL=8 [modelparameter=]val] ...

.MODEL modelname PNP LEVEL=8 [modelparameter=]val] ...

**Level 8 BJT Model Basic Parameters**
Model Parameter	Description	Unit	Default
LEVEL=8	Selects level 8 HiCUM BJT model	None	1
IS	Ideal saturation current	Amp	-1.0
MCF	Non-ideality factor for base-collector reverse current (VT = VT × MCF)	None	1.0
TREF (TNOM)	Reference temperature	°C	26.85

**Level 8 BJT Model Transfer Current Parameters**
Model Parameter	Description	Unit	Default
ALIT	Additional delay time factor for iT	None	0.45
C10	Constant C10 = IS ´ QP0	Amp²-second (Meter²)	3.76e-32
HFC	Weighting factor for Qfc in HBTs	None	1.0
HFE	Weighting factor for Qfe in HBTs	None	1.0
HJCI	Weighting factor for Qjci in HBTs	None	1.0
HJEI	Weighting factor for Qjei in HBTs	None	0.0
ICH	High-current correction for 2D/3D	Amp	2.09e-2
QP0	Zero-bias hole charge	Amp-second	2.78e-14

**Level 8 BJT Model B-E Depletion Capacitance Parameters**
Model Parameter	Description	Unit	Default
ALJEI	Ratio of maximum to zero-bias value	None	1.8
CJEI0	Zero-bias value	Farad	8.11e-15
VDEI	Built-in voltage	Volt	0.95
ZEI	Exponent coefficient	None	0.5

**Level 8 BJT Model B-C Depletion Capacitance Parameters**
Model Parameter	Description	Unit	Default
CJCI0	Zero-bias value	Farad	1.16e-15
VDCI	Built-in voltage	Volt	0.8
VPTCI	Punch-through voltage VPTCI = q ´ NCI ´ w^{(2 ¥ CI)} / (2 ´ EPSILON)	Volt	416
ZCI	Exponent coefficient	None	0.333

**Level 8 BJT Model Forward Transit Time Parameters**
Model Parameter	Description	Unit	Default
ALHC	Smoothing factor for current depletion collector and base transit time	None	0.75
ALQF	Factor for additional delay of Q_f	None	0.225
DTOH	Time constant for base and BC SCR width modulation	Second	2.1e-12
FTHC	Partitioning factor for base and collector portion	None	0.6
GTFE	Smoothing factor for current depletion emitter transit time	None	1.4
TBVL	Voltage for modeling carrier jam at low V_C’E’	Second	40e-12
TEF0	Storage time in neutral emitter	Second	1.8e-12
THCS	Saturation time constant at high current densities	Second	3.0e-11
T0	Low current transit time at V_B’C’ = 0	Second	4.75e-12

**Level 8 BJT Model Critical Current Parameters**
Model Parameter	Description	Unit	Default
RCI0	Low-field resistance of internal collector region	Ohm	127.8
VCES	Internal collector-emitter saturation voltage	Volt	0.1
VLIM	Voltage separating ohmic and SCR regime	Volt	0.7
VPT	Epitaxial punch-through voltage on base-collector SCR	Volt	5.0

**Level 8 BJT Model Inverse Transit Time Parameter**
Model Parameter	Description	Unit	Default
TR	Time constant for inverse operation	Second	1.0e-9

**Level 8 BJT Model Base Current Components Parameters**
Model Parameter	Description	Unit	Default
IBCIS	Base-collector saturation current	Amp	1.16e-20
IBEIS	Base-emitter saturation current	Amp	1.16e-20
IREIS	Base-emitter recombination saturation current	Amp	1.16e-6
MBCI	Base-collector non-ideality factor	None	1.015
MBEI	Base-emitter non-ideality factor	None	1.015
MREI	Base-emitter recombination non-ideality factor	None	2.0

**Level 8 BJT Model B-C Avalanche Breakdown Parameters**
Model Parameter	Description	Unit	Default
FAVL	Prefactor for collector-base avalanche effect	Volt^-1	1.186
QAVL	Exponent factor for collector-base avalanche effect	Amp-second	1.11e-14

**Level 8 BJT Model Internal Base Resistance Parameters**
Model Parameter	Description	Unit	Default
FCRBI	Ratio of high-frequency shunt to total internal capacitance	None	0.0
FDQR0	Correction factor for modulation by base-emitter and base-collector SCR	None	0.0
FGEO	Geometry factor (value corresponding to long emitter stripe)	None	0.73
FQI	Ratio of internal to total minority charge	None	0.9055
RBI0	Value at zero bias	Ohm	0.0

**Level 8 BJT Model Lateral Scaling Parameters**
Model Parameter	Description	Unit	Default
LATB	Scaling factor for Qfc in 1_E	None	3.765
LATL	Scaling factor for Qfc in 1_E direction	None	0.342

**Level 8 BJT Model Peripheral B-E Depletion Capacitance Parameters**
Model Parameter	Description	Unit	Default
ALJEP	Ratio of maximum to zero-bias value	None	2.4
CJEP0	Zero-bias value	Farad	2.07e-15
VDEP	Built-in voltage	Volt	1.05
ZEP	Depletion coefficient	None	0.4

**Level 8 BJT Model Peripheral Base Current Parameters**
Model Parameter	Description	Unit	Default
IBEPS	Saturation current	Amp	3.72e-21
IREPS	Recombination saturation factor	Amp	1.0e-30
MBEP	Saturation current non-ideality factor	None	1.015
MREP	Recombination non-ideality factor	None	2.0

**Level 8 BJT Model External B-C Capacitance Parameters**
Model Parameter	Description	Unit	Default
CCOX	Collector oxide capacitance	Farad	2.97e-15
CJCX0	Zero-bias depletion value	Farad	5.393e-15
FBC (FBCS)	Partitioning factor for external base-collector capacitance C_BCX FBC = C’_BCx + C”_BCc	None	0.1526
VDCX	Built-in voltage	Volt	0.7
VPTCX	Punch-through voltage	Volt	100
ZCX	Exponent coefficient	None	0.333

**Level 8 BJT Model Miscellaneous External Element Parameters**
Model Parameter	Description	Unit	Default
CEOX	Emitter-base isolation overlap capacitance	Farad	1.13e-15
RBX	External base series resistance	Ohm	0.0
RCX	Emitter series resistance	Ohm	0.0
RE	External base series resistance	Ohm	0.0

**Level 8 BJT Model Substrate Transistor Parameters**
Model Parameter	Description	Unit	Default
ISCS	Saturation current of collector-substrate diode	Amp	0.0
ITSS	Transfer saturation current	Amp	0.0
MSC	Non-ideality factor of collector-substrate diode	None	1.0
MSF	Non-ideality factor of forward transfer current	None	0.0
MSR	Non-ideality factor for base-collector substrate transistor (VT = VT × MCF)	None	1.0
TSF	Minority charge storage transit time factor	Second	0.0

**Level 8 BJT Model C-S Depletion Capacitance Parameters**
Model Parameter	Description	Unit	Default
CJS0	Zero-bias value of collector-substrate depletion capacitance	Farad	3.64e-14
VDS	Built-in voltage	Volt	0.6
VPTS	Punch-through voltage	Volt	1000
ZS	Exponent coefficient	None	0.447

**Level 8 BJT Model Base Current Components Parameters**
Model Parameter	Description	Unit (Factor)	Default
CSU	Substrate capacitance from permittivity of bulk material	Farad	0.0
RSU	Substrate series resistance	Ohm	0.0

**Level 8 BJT Model Noise Parameters**
Model Parameter	Description	Unit	Default
AF	Flicker noise exponent factor (no unit only for AF = 2)	None	2.0
KF	Flicker noise factor	None	1.43e-08
KRBI	Internal base resistance factor	None	1.114

**Level 8 BJT Model Temperature Dependence Parameters**
Model Parameter	Description	Unit	Default
ALB	Relative temperature coefficient of forward current gain	°K^-1	6.3e-3
ALCES	Relative temperature coefficient of VCES	°K^-1	0.4e-3
ALFAV	Relative temperature coefficient for avalanche breakdown	°K^-1	8.25e-5
ALQAV	Relative temperature coefficient for avalanche breakdown	°K^-1	1.96e-4
ALT0	1st-order relative temperature coefficient of TEF0	°K^-1	0.0
ALVS	Relative temperature coefficient of saturation drift velocity	°K^-1	1.0e-3
KT0	2nd-order relative temperature coefficient of TEF0	°K^-1	0.0
VGB	Bandgap voltage	Volt	1.17
ZETACI	Temperature exponent factor of RCI0	None	1.6
ZETACX	Temperature exponent factor for epitaxial layer	None	1.0
ZETARE	Temperature exponent factor of RE	None	0.0
ZETARBI	Temperature exponent factor of RBI0	None	0.588
ZETARBX	Temperature exponent factor of RBX	None	0.2060
ZETARCX	Temperature exponent factor of RCX	None	0.2230

**Level 8 BJT Model Self-Heating Parameters**
Model Parameter	Description	Unit	Default
CTH	Thermal capacitance (Not supported)	Joule/°K	0.0
RTH	Thermal resistance (Not supported)	°K/Ohm	0.0


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