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BJTs >
Level 6 BJT Philips MEXTRAM (503 or 504) Model

Level 6 BJT Philips MEXTRAM (503 or 504) Model

The .MODEL statement for the Level 6 Philips MEXTRAM Version 503 or 504 BJT specifies values for one or more model parameters.

.MODEL modelname NPN LEVEL=6 VERS=val [modelparameter=]val] ...

.MODEL modelname PNP LEVEL=6 VERS=val [modelparameter=]val] ...

**Level 6 BJT Model Flag Parameters**
Model Parameter	Description	Unit	Default
LEVEL	6 is required to select the Level 6 BJT model	None	1 (default if LEVEL parameter is omitted)
VERS	Selects Version 503 or 504	None	503
EXAVL	Flag for extended modeling of avalanche currents	None	0
EXMOD	Flag for extended modeling of reverse current gain	None	503: 1 504: 1
EXPHI	Flag for distributed high frequency effects	None	503: 0 504: 1.0
SUBS	Flag for controlling substrate effect	None	1

**Level 6 BJT Model Basic Parameters**
Model Parameter	Description	Unit	Default
BF	Ideal forward current gain	None	503: 140 504: 215.0
BRI	Ideal reverse current gain	None	503: 16 504: 7.0
ETA	Factor for built-in base field (503 only)	None	4.0
DAIS	(504 only)		0.0
IBF	Saturation current for the non-ideal forward base current	Amp	503: 2.0e-14 504: 2.7e-15
IBR	Saturation current for the non-ideal reverse base current	Amp	503: 8.0e-15 504: 1.0e-15
IK	Collector-emitter high-injection knee current	Amp	503: 1.5e-2 504: 0.1
IS	Collector-emitter saturation current	Amp	503: 5.0e-17 504: 2.2e-17
MLF	Non-ideality factor of the non-ideal forward base current (504 only)	Volt	2.0
QBO (QB0)	Zero-bias base charge (503 only)	Coulomb	1.2e-12
VER	Reverse early voltage (504 only)	Volt	2.5
VEF	Forward early voltage (504 only)	Volt	44.0
VLF	Cross-over voltage of the non-ideal forward base current (503 only)	Volt	0.5
VLR	Cross-over voltage of the non-ideal reverse base current	Volt	503: 0.5 504: 0.2
XEXT	The part of I_ex, Q_ex, Q_tex, and I_sub that depends on the base-collector voltage V_bc1	None	503: 0.5 504: 0.63
XIBI	Fraction of ideal base current that belongs to the sidewall	None	0.0

**Level 6 BJT Model Avalanche Parameters**
Model Parameter	Description	Unit	Default
AXI	Smoothness parameter for the onset of quasi-saturation (504 only)	None	0.3
AVL	Weak avalanche parameter (503 only)	None	50.0
EFI	Electric field intercept (enabled when EXAVL = 1) (503 only)	None	0.7
IHC	Critical hot-carrier current for velocity saturation in the epilayer	Amp	503: 3.0e-3 504: 4.0e-3
KAVL	(504 only)		0.0
RBC	Constant part of the base resistance	Ohm	503: 50 504: 23
RBV	Variable part of the base resistance at zero bias	Ohm	503: 100 504: 18
RCC	Constant part of the collector resistance	Ohm	503: 25.0 504: 12.0
RCV	Resistance of the unmodulated epilayer	Ohm	503: 750.0 504: 150.0
RE	Emitter resistance	Ohm	503: 2.0 504: 5.0
SCRCV	Space charge resistance of the epilayer	Ohm	503: 1000.0 504: 1250.0
SFH	Epilayer current spreading factor for avalanche model (enabled when EXAVL = 1)	None	503: 0.6 504: 0.3
VAVL	Voltage that determines the curvature of the avalanche model (504 only)	Volt	3.0
WAVL	Epilayer thickness used for avalanche model (504 only)	Meter	1.1e-6

**Level 6 BJT Model Base-Emitter Capacitance Parameters**
Model Parameter	Description	Unit	Default
CJE	Zero-bias emitter-base depletion capacitance	Farad	503: 2.5e-13 504: 7.3e-14
CJC	Zero-bias collector-base depletion capacitance	Farad	503: 1.3e-13 504: 7.8e-14
MC	Coefficient for the current modulation of the collector-base depletion capacitance	None	0.5
PC	Collector-base grading coefficient (variable part)	None	503: 0.4 504: 0.5
PE	Emitter-base grading coefficient	None	503: 0.33 504: 0.4
VDC	Collector-base diffusion voltage	Volt	503: 0.6 504: 0.68
VDE	Emitter-base diffusion voltage	Volt	503: 0.9 504: 0.95
XCJC	Fraction of the collector-base depletion capacitance under the emitter	None	503: 0.1 504: 3.2e-2
XCJE	Fraction of the collector-base depletion capacitance that belongs to the sidewall	None	503: 0.5 504: 0.4
XP	Constant part of CJC	Farad	503: 0.2 504: 0.35

**Level 6 BJT Model Transit Time Parameters**
Model Parameter	Description	Unit	Default
MTAU	503: Non-ideality factor of the neutral and emitter charge 504: Non-ideality factor of the emitter charge	None	503: 1.18 504: 1.0
TAUB	Transit time of stored base charge (504 only)	Second	4.2e-12
TAUE	Minimum transit time of stored emitter charge (504 only)	Second	2.0e-12
TAUNE	Minimum transit time of neutral and emitter charge (503 only)	Second	3.0e-10
TAUR	Transit time of reverse extrinsic stored base charge (504 only)	Second	5.2e-10
TEPI	Transit time of stored epilayer charge (504 only)	Second	4.1e-11
XREC	Pre-factor of the recombination part of I_b1 (504 only)	None	0.0

**Level 6 BJT Model Temperature Parameters**
Model Parameter	Description	Unit	Default
AB	Temperature coefficient for the resistivity of the base	None	503: 1.35 504: 1.0
AC	Temperature coefficient for the resistivity of the buried layer	None	503: 0.4 504: 2.0
AE	Temperature coefficient for the resistivity of the emitter (504 only)	None	0.0
AEPI	Temperature coefficient for the resistivity of the epilayer	None	503: 2.15 504: 2.5
AEX	Temperature coefficient for the resistivity of the extrinsic base	None	503: 1.0 504: 0.62
AQBO	Temperature coefficient for the zero-bias base charge (504 only)	None	0.3
ER	Temperature coefficient of VLF and VLR (503 only)	None	2.0e-3
TREF (TNOM)	Nominal circuit temperature	°C	25
TSCALE	(504 only)		1.0

**Level 6 BJT Model Bandgap and Base Doping Parameters**
Model Parameter	Description	Unit	Default
DEG	Bandgap difference over the base (504 only)	electron-Volt	0.0
DVGBF	Bandgap voltage difference of forward current gain (504 only)	Volt	5.0e-2
DVGBR	Bandgap voltage difference of reverse current gain (504 only)	Volt	4.5e-2
DVGTE	Bandgap voltage difference of emitter stored charge (504 only)	Volt	0.05
NA	Maximum base doping concentration	cm^-3	3.0e17
VGB	Band gap voltage of the base	Volt	503: 1.18 504: 1.17
VGC	Band gap voltage of the collector	Volt	503: 1.205 504: 1.18
VGE	Band gap voltage of the emitter (503 only)	Volt	1.01
VGJ	Band gap voltage recombination, emitter-base junction	Volt	503: 1.1 504: 1.15
VI	Ionization voltage of base doping	Volt	0.040

**Level 6 BJT Model Noise Parameters**
Model Parameter	Description	Unit	Default
AF	Flicker noise exponent	None	503: 1.0 504: 2.0
KF	Flicker noise coefficient for ideal base current	None	503: 2.0e-16 504: 2.0e-11
KFN	Flicker noise coefficient for non-ideal base current	None	503: 2.0e-16 504: 2.0e-11

**Level 6 BJT Model Substrate Parameters**
Model Parameter	Description	Unit	Default
AS	Temperature coefficient for the resistivity of the substrate For a closed buried layer, AS = AC For an open buried layer, AS = AEPI	None	503: 2.15 504: 1.58
CJS	Zero-bias collector-substrate depletion capacitance	Farad	503: 1.0e-12 504: 3.15e-13
IKS	Base-substrate high-injection knee current	Amp	503: 5.0e-6 504: 2.5e-4
ISS	Base-substrate saturation current	Amp	503: 6.0e-16 504: 4.8e-17
PS	Collector-substrate grading coefficient	None	503: 0.33 504: 0.34
VDS	Collector-substrate diffusion voltage	Volt	503: 0.5 504: 0.62
VGS	Bandgap voltage of the substrate	Volt	503: 1.15 504: 1.2

**Level 6 BJT Model Self-Heating Parameters**
Model Parameter	Description	Unit	Default
ATH	RTH exponential factor	None	0.0
RTH	Self-heating thermal resistance (504 only)	°C/Ohm	300
CTH	Self-heating thermal capacitance (504 only)	Joule/°C	3.0e-9

**Level 6 BJT Model Extrinsic Capacitance Parameters**
Model Parameter	Description	Unit	Default
CBEO	Extrinsic base-emitter capacitance (504 only)	Farad	0.0
CBCO	Extrinsic base-collector capacitance (504 only)	Farad	0.0