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Ansoft Designer / Ansys Designer 在线帮助文档：

Nexxim Simulator >
Nexxim Component Models >
BJTs >
   Level 2 Quasi-Saturation BJT Model       

Level 2 Quasi-Saturation BJT Model

The .MODEL statement for the Level 2 quasi-saturation BJT specifies values for one or more model parameters.

.MODEL modelname NPN LEVEL=2 [modelparameter=]val] ...

or

.MODEL modelname PNP LEVEL=2 [modelparameter=]val] ...

The Level 2 quasi-saturation model BJT includes all the model parameters and default values given above for the Level 1 BJT. See Bipolar Transistor Model, Linear.


Level 2 BJT Additional Model Parameters

Model Parameter

Description

Unit

Default

LEVEL

2 is required to select the Level 2 BJT model

None

1 (default if LEVEL parameter is omitted)

BEX

VO temperature exponent

None

2.42

BEXV

RC temperature exponent

None

1.90

BRS

Reverse Beta for substrate BJT

None

0.0

GAMMA

Epitaxial doping factor

GAMMA = (2 ´ ni / ne)2, where

ni = intrinsic carrier concentration and
ne = epitaxial dopant concentration

None

0.0

NEPI

Emission coefficient

None

1.0

QCO

Epitaxial charge factor. When both IBC and IBE > 0 and SUBS = +1:

QCOeff = QCO ´ AREAB ´ M

When both IBC and IBE > 0 and SUBS = -1:

QCOeff = QCO ´ AREAC ´ M

Coulomb

0.0

VO

Carrier velocity saturation voltage. Zero represents infinite voltage.

Volt

0.0

 

Quasi-Saturation BJT Model Netlist Example

.MODEL bjttest2 NPN LEVEL=2 gamma=1.0e-9



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