Model Parameter

Description

Unit

Default

LEVEL=13

Selects level 13 HiCUM L0 BJT model

None

1

MCF

Base-collector depletion charge weighting factor for Qjci in HBTs

1.0

CJCI0

Internal base-collector zero-bias depletion capacitance

Farad

1e-20

VDCI

Internal base-collector built-in potential

Volt

0.7

ZCI

Internal base-collector grading coefficient

0.333

VPTCI

Internal base-collector punch-through voltage

Volt

100.0

T0

Low-current forward transit time at Vbc=0

Second

0.0

DT0H

Time constant for base and base-collector space charge layer width modulation

Second

0.0

TBVL

Time constant for modelling carrier jam at low Vce

Second

0.0

TEF0

Neutral emitter storage time

Second

0.0

GTE

Exponent factor for current dependence of TEF0

1.0

THCS

Saturation time constant at high current densities

Second

0.0

AHC

Smoothing factor for current dependence of base-collector transit time

0.1

RCI0

Internal collector resistance at low electric field

Ohm

150.0

VLIM

Voltage separating ohmic and saturation velocity regime

Volt

0.5

VPT

Collector punch-through voltage

Volt

100.0

VCES

Internal collector-emitter saturation voltage

Volt

0.1

TR

Storage time for inverse operation

Second

0.0

RBI0

Zero-bias internal base resistance

Ohm

0.0

FGEO

Factor for geometry dependence of emitter current crowding

0.656

CJCX0

External base-collector zero-bias depletion capacitance

Farad

1e-20

VDCX

External base-collector built-in potential

Volt

0.7

ZCX

External base-collector grading coefficient

0.333

VPTCX

External base-collector punch-through voltage

Volt

100.0

FBC

Partitioning factor for external base-collector capacitance

1.0

RBX

External base series resistance

Ohm

0.0

RE

Emitter series resistance

Ohm

0.0

RCX

External collector series resistance

Ohm

0.0

ISCS

Saturation current of collector-substrate diode

Ampere

0.0

MSC

Ideality factor of collector substrate diode current

1.0

CJS0

Collector-substrate zero-bias depletion capacitance

Farad

1.0e-20

VDS

Collector-substrate built-in potential

Volt

0.3

ZS

Collector-substrate grading coefficient

0.3

VPTS

Collector-substrate punch-through voltage

Volt

100.0

KF

Flicker noise coefficient

0.0

AF

Flicker noise exponent factor

2.0

VGB

Band-gap voltage extrapolated to 0°K

Volt

1.2

ALT0

First-order relative temperature coefficient of parameter T0

1/°K

0.0

KT0

Second-order relative temperature coefficient of parameter T0

1/°K²

0.0

ZETACI

Temperature coefficient for RCI0

0.0

ALVS

Relative temperature coefficient of saturation drift velocity

1/°K

0.0

ALCES

Relative temperature coefficient of VCES

1/°K

0.0

ZETARBI

Temperature exponent of internal base resistance

0.0

ZETARBX

Temperature exponent ofexternal base resistance

0.0

ZETARCX

Temperature exponent of external collector resistance

0.0

ZETARE

Temperature exponent of emitter resistance

0.0

ALKAV

Relative temperature coefficient for avalanche breakdown KAVL

1/°K

0.0

ALEAV

Relative temperature coefficient for avalanche breakdown EAVL

1/°K

0.0

TNOM

Temperature at which parameters are specified

°C

27.0

RTH

Thermal resistance

°K/Watt

0.0

CTH

Thermal capacitance

Watt-second/°K

0.0

MINR

Minimum resistance

Ohm

0.001

IS

Ideal saturation current

Ampere

1.0e-16

MCR

Non-ideality coefficient of forward collector current

1.0

VEF

Forward Early voltage (normalization voltage)

Volt

IQF

Forward DC high-injection roll-off current

Ampere

IQR

Inverse DC high-injection roll-off current

Ampere

IQFH

High-injection correction current

Ampere

TFH

High-injection correction factor

IBES

Base-emitter saturation current

Ampere

1.0e-18

MBE

Base-emitter non-ideality factor

1.0

IRES

Base-emitter recombination saturation current

Ampere

0.0

MRE

Base-emitter recombination non-ideality factor

2.0

IBCS

Base-collector saturation current

Ampere

0.0

MBC

Base-collector non-ideality factor

1.0

CJE0

Zero-bias base-emitter depletion capacitance

Farad

1.0e-20

VDE

Base-emitter built-in voltage

Volt

0.9

ZE

Base-emitter exponent factor

0.5

AJE

Ratio of maximum to zero-bias value

2.5

VR0E

Forward Early voltage (normalization voltage)

Volt

2.5

VROC

Forward Early voltage (normalization voltage)

Volt

CBCPAR

Collector-base isolation (overlap) capacitance

Farad

0.0

CBEPAR

Emitter-base oxide capacitance

Farad

0.0

EAVL

Exponent factor for collector-base avalanche effect

0.0

KAVL

Prefactor for collector-base avalanche effect

0.0

VGE

Effective emitter bandgap voltage

Volt

1.17

VGC

Effective collector bandgap voltage

Volt

1.17

VGS

Effective substrate bandgap voltage

Volt

1.17

F1VG

Coefficient K1 in temperature-dependent bandgap equation

-1.02377e-4

F2VG

Coefficient K2 in temperature-dependent bandgap equation

4.3215e-4

ZETACT

Exponent coefficient in transfer current temperature dependence

3.0

ZETABET

Exponent coefficient in Base-emitter junction current temperature dependence

3.5

ITSS

Substrate transistor transfer saturation current

Ampere

0.0

MSF

Substrate transistor transfer current non-ideality factor

1.0

FLSH

Flag for self-heating

None

0.0