Level 11 UCSD HBT Model
Parameters
Model Parameter
|
Description
|
Unit
|
Default
|
LEVEL
|
11 is required to select the Level
11 HBT model
|
None
|
1 (default if LEVEL parameter is
omitted)
|
AFN
|
Base-emitter flicker noise current
exponent
|
None
|
1
|
BF
|
Forward ideal current gain
|
None
|
10000
|
BFN
|
Base-emitter flicker noise frequency
exponent
|
None
|
1
|
BKDN
|
Flag to include base-collector
breakdown
|
None
|
0
|
BR
|
Reverse ideal current gain
|
None
|
10000
|
BVC
|
Collector-base breakdown voltage
BVcbo
|
Volt
|
1000
|
CCMIN
|
Minimum value of intrinsic base-collector
junction capacitance (Cj)
|
Farad
|
0.0
|
CEMIN
|
Minimum base-emitter capacitance
|
Farad
|
0
|
CJC
|
Intrinsic base-collector depletion
capacitance as zero bias
|
Farad
|
0
|
CJCX
|
Extrinsic base-collector depletion
capacitance as zero bias
|
Farad
|
0
|
CJE
|
Base-emitter depletion capacitance
as zero bias
|
Farad
|
0
|
CJS
|
Collector-substrate depletion capacitance
at zero bias
|
Farad
|
0.0
|
CTH
|
Thermal capacitance of device
|
°C/Joule
|
0
|
CXMIN
|
Minimum value of extrinsic base-collector
junction capacitance (Cj)
|
Farad
|
0.0
|
DTMAX
|
Maximum expected temperature rise
above heatsink
|
°C
|
1000
|
EAA
|
Activation energy for ISE temperature
dependence
|
Volt
|
0.0
|
EAB
|
Activation energy for ISC temperature
dependence
|
Volt
|
0.0
|
EAC
|
Activation energy for ISB temperature
dependence
|
Volt
|
0.0
|
EAE
|
Activation energy for ISA temperature
dependence
|
Volt
|
0.0
|
EAX
|
Activation energy for ISEX temperature
dependence
|
Volt
|
0.0
|
EG
|
Activation energy for IS temperature
dependence
|
Volt
|
1.5
|
FA
|
Factor for specification of avalanche
voltage
|
None
|
0.9
|
FC
|
Factor for start of high-bias base-collector
junction capacitance (Cj) approximation
|
None
|
0.8
|
FCE
|
Factor for start of high-bias base-emitter
junction capacitance (Cj) approximation
|
None
|
0.8
|
FEX
|
Factor to determine excess phase
|
None
|
0.0
|
ICRIT0
|
Critical current for intrinsic
junction capacitance (Cj) variation
|
Amp
|
1.0e+3
|
ICS
|
Saturation value for collector-substrate
current
|
Amp
|
1.0e-30
|
IK
|
Knee current for DC high-injection
effect
|
Amp
|
1.0e+10
|
IKRK
|
Characteristic current for Kirk
effect
|
Amp
|
1.0e3
|
IS
|
Saturation value for forward collector
current
|
Amp
|
1.0e-25
|
ISA
|
Collector current emitter-base
barrier limiting current
|
Amp
|
1.0e+10
|
ISB
|
Collector current base-collector
barrier limiting current
|
Amp
|
1.0e+10
|
ISC
|
Saturation value for intrinsic
base-collector junction current
|
Amp
|
1.0e-30
|
ISCX
|
Saturation value for extrinsic
base-collector junction current
|
Amp
|
1.0e-30
|
ISE
|
Saturation value for non-ideal
forward base current
|
Amp
|
1.0e-30
|
ISEX
|
Saturation value for emitter leakage
diode
|
Amp
|
1.0e-30
|
ITC
|
Characteristic current for TFC
|
Amp
|
0.0
|
ITC2
|
Characteristic current for TFC
|
Amp
|
0.0
|
KFN
|
Base-emitter flicker noise constant
|
None
|
0.0
|
MJC
|
Exponent for voltage variation
of intrinsic base-collector junction capacitance (Cj)
|
None
|
0.33
|
MJCX
|
Exponent for voltage variation
of extrinsic base-collector junction capacitance (Cj)
|
None
|
0.33
|
MJE
|
Exponent for voltage variation
of base-emitter junction capacitance (Cj)
|
None
|
0.5
|
MJS
|
Exponent for voltage variation
of intrinsic collector-substrate junction capacitance (Cj)
|
None
|
0.5
|
NA
|
Collector current emitter-base
barrier ideality factor
|
None
|
2
|
NB
|
Collector current base-collector
barrier ideality factor
|
None
|
2
|
NBC
|
Exponent for base-collector multiplication
factor vs voltage
|
None
|
8
|
NC
|
Ideality factor for intrinsic base-collector
junction current
|
None
|
2
|
NCS
|
Ideality factor for collector-substrate
current
|
None
|
2
|
NCX
|
Ideality factor for extrinsic base-collector
junction current
|
None
|
2
|
NE
|
Ideality factor for non-ideal forward
base current
|
None
|
2
|
NEX
|
Ideality factor for emitter leakage
diode
|
None
|
2
|
NF
|
Ideality factor for forward collector
current
|
None
|
1.0
|
NR
|
Ideality factor for reverse collector
current
|
None
|
1.0
|
RBI
|
Intrinsic base resistance
|
Ohm
|
0
|
RBX
|
Extrinsic base resistance
|
Ohm
|
0
|
RCI
|
Intrinsic collector resistance
|
Ohm
|
0
|
RCX
|
Extrinsic collector resistance
|
Ohm
|
0
|
RE
|
Emitter resistance
|
Ohm
|
0
|
REX
|
Extrinsic emitter leakage diode
series resistance
|
Ohm
|
0
|
RTH
|
Thermal resistance from device
to thermal ground
|
°C/Watt
|
0.0
|
SELFT
|
Flag to enable self-heating effect
calculations (0 = disable self-heating,
1 = enable self-heating)
|
None
|
0
|
TBCXS
|
Excess base-collector heterojunction
transit time
|
Second
|
0
|
TBEXS
|
Excess base-emitter heterojunction
transit time
|
Second
|
0
|
TFB
|
Base forward transit time
|
Second
|
0
|
TFC0
|
Collector forward transit time
|
Second
|
0
|
TKRK
|
Forward transit time for Kirk effect
|
Second
|
0.0
|
TNC
|
NC temperature dependence coefficient
|
None
|
0.0
|
TNE
|
NE temperature dependence coefficient
|
None
|
0.0
|
TNEX
|
NEX temperature dependence coefficient
|
None
|
0.0
|
TNOM (TREF)
|
Reference temperature
|
°C
|
27
|
TR
|
Reverse charge storage time, intrinsic
base-collector diode
|
Second
|
0.0
|
TRX
|
Reverse charge storage time, extrinsic
base-collector diode
|
Second
|
0.0
|
TVJC
|
VJC temperature dependence coefficient
|
Volt/°C
|
0.0
|
TVJCX
|
VJCX temperature dependence coefficient
|
Volt/°C
|
0.0
|
TVJE
|
VJE temperature dependence coefficient
|
Volt/°C
|
0.0
|
TVJS
|
VJS temperature dependence coefficient
|
Volt/°C
|
0.0
|
VAF
|
Forward early voltage
|
Volt
|
1000
|
VAR
|
Reverse early voltage
|
Volt
|
1000
|
VJC
|
Intrinsic base-collector diode
built-in potential for junction capacitance (Cj) estimation
|
Volt
|
1.4
|
VJCX
|
Extrinsic base-collector diode
built-in potential for junction capacitance (Cj) estimation
|
Volt
|
1.4
|
VJE
|
Base-emitter diode built-in potential
for junction capacitance (Cj) estimation
|
Volt
|
1.6
|
VJS
|
Intrinsic collector-substrate diode
built-in potential for junction capacitance (Cj) estimation
|
Volt
|
1.4
|
VKRK
|
Characteristic voltage for Kirk
effect
|
Volt
|
1.0e3
|
VTC
|
Characteristic voltage for TFC
|
Volt
|
1.0e3
|
XCJC
|
Factor for partitioning extrinsic
base-collector junction capacitance (Cj)
|
None
|
1.0
|
XRB
|
RB temperature dependence exponent
|
None
|
0
|
XRC
|
RC temperature dependence exponent
|
None
|
0
|
XRE
|
RE temperature dependence exponent
|
None
|
0
|
XREX
|
REX temperature dependence exponent
|
None
|
0
|
XRT
|
Temperature exponent of RTH
|
None
|
0.0
|
XTB
|
Beta temperature dependence exponent
|
None
|
2
|
XTI
|
IS temperature dependence exponent
|
None
|
2
|
XTIKRK
|
IKRK temperature dependence exponent
|
None
|
0
|
XTITC
|
ITC temperature dependence exponent
|
None
|
0
|
XTITC2
|
ITC2 temperature dependence exponent
|
None
|
0
|
XTTF
|
TF temperature dependence exponent
|
None
|
0
|
XTTKRK
|
TKRK temperature dependence exponent
|
None
|
0
|
XTVKRK
|
VKRK temperature dependence exponent
|
None
|
0
|
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