淘宝官方店     推荐课程     在线工具     联系方式     关于我们  
 
 

微波射频仿真设计   Ansoft Designer 中文培训教程   |   HFSS视频培训教程套装

 

Agilent ADS 视频培训教程   |   CST微波工作室视频教程   |   AWR Microwave Office

          首页 >> Ansoft Designer >> Ansoft Designer在线帮助文档


Ansoft Designer / Ansys Designer 在线帮助文档:


Nexxim Simulator >
Nexxim Component Models >
BJTs >
   Bipolar Transistor Instance, UCSD HBT Model (Level 11)       

Bipolar Transistor Instance, UCSD HBT Model (Level 11)

 

Level 11 HBT Instance Netlist Syntax

The syntax for a level 11 UCSD model heterojunction bipolar transistor (HBT) instance is:

Qxxxx nc nb ne [ns] [nt] modelname

[AREA=val] [M=val] [TNOM=val] [DTEMP=val] [TNODEOUT]

nc is the collector node, nb is the base node, ne is the emitter node, ns is the substrate node, and nt is the self-heating node of the transistor. The modelname is the name of a level 11 BJT model defined in a .MODEL statement elsewhere in the netlist. The TNODEOUT flag indicates that node nt is present but node ns is not present.

 


Level 11 UCSD HBT Instance Parameters

Instance Parameter

Description

Unit

Default

AREA

Emitter area factor for currents, resistances, and capacitances

None

1.0

M

Multiplier: simulates parallel transistors

None

1

TNODEOUT

Flag to indicate that node nt is present but node ns is not present

None

None

TNOM

Circuit temperature

°C

27

DTEMP

Difference between capacitor and circuit temperatures

°C

0


Level 11 BJT Instance Netlist Example

Q15 3 4 5 6 bjthbt11 DTEMP=5

 




HFSS视频教学培训教程 ADS2011视频培训教程 CST微波工作室教程 Ansoft Designer 教程

                HFSS视频教程                                      ADS视频教程                               CST视频教程                           Ansoft Designer 中文教程


 

      Copyright © 2006 - 2013   微波EDA网, All Rights Reserved    业务联系:mweda@163.com