Model Parameter

Description

Unit

Default

LEVEL=10

Selects level 10 Philips MODELLA BJT model

None

1

AE

Temperature coefficient of the resistivity of BF

None

4.48

AF

Flicker noise exponent

None

1.0

BF

Ideal forward common-emitter current gain

None

131.0

BR

Ideal reverse common-emitter current gain

None

25.0

CJC

Zero-bias collector-base depletion capacitance

Farad

3.90e-13

CJE

Zero-bias emitter-base depletion capacitance

Farad

6.10e-14

CJS

Zero-bias substrate-base depletion capacitance

Farad

1.30e-12

EAFL

Early voltage of the lateral forward current component at zero collector-base bias

Volt

20.50

EAFV

Early voltage of the vertical forward current component at zero collector-base bias

Volt

75.0

EARL

Early voltage of the lateral reverse current component at zero collector-base bias

Volt

13.10

EARV

Early voltage of the vertical reverse current component at zero collector-base bias

Volt

104.0

EXPHI

Excess phase shift

Radians

0.0

IBF

Saturation current of the non-ideal forward base current

Amp

2.60e-14

IBR

Saturation current of the non-ideal reverse base current

Amp

1.20e-13

IK

High-injection knee current

Amp

1.10e-4

IS

Collector-emitter saturation current

Amp

1.80e-16

ISS

Substrate-base saturation current

Amp

4.00e-13

KF

Flicker noise coefficient

None

0.00

PC

Collector-base grading coefficient

None

0.36

PE

Emitter-base grading coefficient

None

0.30

PS

Substrate-base grading coefficient

None

0.35

RBCC

Constant part of base resistance RBC

Ohm

10.00

RBCV

Variable part of base resistance RBC at zero bias

Ohm

10.00

RBEC

Constant part of base resistance RBE

Ohm

10.00

RBEV

Variable part of base resistance RBE at zero bias

Ohm

50.00

RCEX

External part of collector resistance

Ohm

5.00

RCIN

Internal part of collector resistance

Ohm

47.00

REEX

External part of emitter resistance

Ohm

27.00

REIN

Internal part of emitter resistance

Ohm

66.00

RSB

Substrate-base leakage resistance

Ohm

1.00e+15

SNB

Temperature coefficient of the epitaxial base electron mobility

None

2.60

SNBN

Temperature coefficient of buried layer electron mobility

None

0.30

SPB

Temperature coefficient of the epitaxial base hole mobility

None

2.853

SPC

Temperature coefficient of collector hole mobility

None

0.73

SPE

Temperature coefficient of emitter hole mobility

None

0.73

SX

Temperature coefficient of combined minority carrier mobilities in emitter and buried layer

None

1.00

TFN

Low-injection forward transit time due to charge stored in the emitter and the buried layer under the emitter

Second

2.00e-10

TFVR

Low-injection forward transit time due to charge stored in the epilayer under the emitter

Second

3.00e-8

TLAT

Low-injection forward and reverse transit time of charge stored in the epilayer between emitter and collector

Second

2.40e-9

TNOM (TREF)

Nominal circuit temperature

°C

25

TRN

Low-injection reverse transit time due to charge stored in the collector and the buried layer under the collector

Second

3.00e-9

TRVR

Low-injection reverse transit time due to charge stored in the epilayer under the collector

Second

1.00e-9

VDC

Collector-base diffusion voltage

Volt

0.57

VDE

Emitter-base diffusion voltage

Volt

0.52

VDS

Substrate-base diffusion voltage

Volt

0.52

VGB

Bandgap voltage of the base between emitter and collector

Volt

1.206

VGCB

Bandgap voltage of the collector-base depletion region

Volt

1.206

VGE

Bandgap voltage of the emitter

Volt

1.206

VGEB

Bandgap voltage of the emitter-base depletion region

Volt

1.206

VGJE

Bandgap voltage recombination emitter-base junction

Volt

1.123

VGSB

Bandgap voltage of the substrate-base depletion region

Volt

1.206

VLF

Cross-over voltage of non-ideal forward base current

Volt

0.54

VLR

Cross-over voltage of non-ideal reverse base current

Volt

0.48

XCS

Ratio between saturation currents of c-b-s transistor and c-b-e transistor

None

3.00

XES

Ratio between saturation currents of e-b-s transistor and e-b-c transistor

None

2.70e-3

XHCS

Fraction of substrate current of c-b-s transistor subject to high injection

None

1.00

XHES

Fraction of substrate current of e-b-s transistor subject to high injection

None

0.70

XIFV

Vertical fraction of forward current

None

0.43

XIRV

Vertical fraction of reverse current

None

0.43