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BJTs >
Bipolar Transistor Instance, Linear (Level 1)

Bipolar Transistor Instance, Linear (Level 1)

Linear BJT Instance Netlist Syntax

The syntax for a Level 1 bipolar junction transistor (BJT) instance is:

Qxxxx nc nb ne [ns] modelname

[[AREA=]val] [AREAB=val] [AREAC=val]

[M=val] [DTEMP=val]

nc is the collector node, nb is the base node, ne is the emitter node, and ns is the substrate node of the transistor. The modelname is the name of a Level 1 BJT model defined in a .MODEL statement elsewhere in the netlist.

**Level 1 BJT Instance Parameters**
Instance Parameter	Description	Unit	Default
AREA	Emitter area factor for currents, resistances, and capacitances	None	1.0
AREAB	Base area factor for currents, resistances, and capacitances. Applied to transistors with vertical geometry.	None	1.0
AREAC	Collector area factor for currents, resistances, and capacitances. Applied to transistors with lateral geometry.	None	1.0
DTEMP	Difference between capacitor and circuit temperatures	°C	0
M	Multiplier: simulates parallel devices	None	1.0

Linear BJT Instance Netlist Examples

Q1 20 34 0 bipolar1

Qtest input vcc gnd gnd bipolar1 area=1.1

.MODEL bipolar1 NPN LEVEL=1

BJT Level 1 Output Quantities

The BJT Level 1 instance can output the quantities listed below. The output quantities are the values of model parameters and the values of variables that are calculated internally to the model.

In the Schematic Editor, you request Nexxim to create these outputs with the Output Quantities selection on the Solution Setup dialogs.

In a netlist, you request Nexxim to create these outputs with the following statement:

.PRINT analysis_type O(instance_name)

Where analysis_type identifies the Nexxim analysis (TRAN, HB, etc.) and instance_name identifies the device instance in the netlist, shown as Qxxxx in the netlist syntax.

**BJT Level 1 Output Quantities**
Output Code	Parameter or Variable	Description	Unit
LV1	AREA	Area factor	Meter²
LV4	M	Multiplier for multiple parallel devices	None
LV5	FT	Unity gain bandwidth	Hertz
LV6	ISUB	Substrate current	Amp
LV7	GSUB	Substrate conductance	Mho
LV8	LOGIC	Log₁₀(IC) [IC = collector current]	None
LV9	LOGIB	Log₁₀(IB) [IB = base current]	None
LV10	BETA	Transistor BETA
LV11	LOGBETAI	Log₁₀(BETA Current)
LV14	RB	Base resistance	Ohm
LV15	GRE	Emitter conductance	Mho
LV16	GRC	Collector conductance	Mho
LX0	VBE	Base-emitter potential	Volt
LX1	VBC	Base-collector potential	Volt
LX2	CCO	Collector current	Amp
LX3	CBO	Base current	Amp
LX4	GPI	IB/VBE for constant VBC
LX5	GU	IB/VBC for constant VBE
LX6	GM	IC/VBE + IB/VBE for constant VCE
LX7	GO	IC/VCE for constant VBE
LX8	QBE	Base-emitter charge	Coulomb
LX9	CQBE	Base-emitter charge current	Amp
LX10	QBC	Base-collector charge	Coulomb
LX11	CQBC	Base-collector charge current	Amp
LX12	QCS	Collector-substrate charge	Coulomb
LX13	CQCS	Collector-substrate charge current	Amp
LX14	QBX	Base-internal charge	Coulomb
LX15	CQBX	Base-internal charge current	Amp
LX16	GXO	Internal conductance (1/RBeff)	Mho
LX17	CEXBC	Base-collector equivalent current	Amp
LX19	CAP_BE	CBE capacitance (C_p)	Farad
LX20	CAP_IBC	CBC internal base-collector capacitance (C_m)	Farad
LX21	CAP_SCB	CSC substrate-collector capacitance for vertical transistors CSB substrate-base capacitance for lateral transistors	Farad
LX22	CAP_XBC	CBCX external base-collector capacitance	Farad
LX23	CMCMO	TF*IBE/VBI
LX24	VSUB	Substrate voltage	Volt

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